复合晶体管

晶体管

Transistors

拥有引以为豪的世界最高等级生产量的罗姆晶体管,可以迅速应对时代的需求。
而且拥有多种复合晶体管,诸如以下的列表。

MOSFET		双极晶体管			数字晶体管		内置二极管
[MOS+MOS] [MOS+Diode]		[BIP+BIP] [BIP+DTR] [DTR+MOS]	[BIP+MOS] [BIP+Diode] [DTR+Diode]		[DTR+DTR]		MOS[MOS+Diode] BIP[BIP+Diode] BIP[DTR+Diode]

MOSFET 一览

双极晶体管一览

数字晶体管一览

产品一览表

复合 MOSFET[ MOSFET + MOSFET ]

Small Signal MOSFET

EMT6	UMT5 (SC-88A) <SOT-353>	UMT6 (SC-88) <SOT-363>	SMT6 (SC-74) <SOT-457>

[单位:mm]

Drive Voltage (V)	I_D (A)	V_DSS(V)								RoHS
Drive Voltage (V)	I_D (A)	20	Package	30	Package	50	Package	60	Package	RoHS
0.9	0.2	-	-	-	-	EM6K34(N+N) UM6K34N(N+N)	EMT6 UMT6	-	-	Yes
1.2	0.2	EM6J1(P+P) EM6K7(N+N) EM6M2(N+P)	EMT6 EMT6 EMT6	-	-	EM6K33(N+N) UM6K33N(N+N)	EMT6 UMT6	-	-	Yes
1.8	0.3	EM6K6(N+N)	EMT6	-	-	-	-	-	-	Yes
2.5	0.1	-	-	EM6K1(N+N) EM6M1(N+P) UM5K1N(N+N) UM6K1N(N+N)	EMT6 EMT6 UMT5 UMT6	-	-	-	-	Yes
2.5	0.25	-	-	-	-	-	-	EM6K31(N+N) UM6K31N(N+N)	EMT6 UMT6	Yes
4	0.2	-	-	UM6J1N(P+P)	UMT6	-	-	SM6K2(N+N)	SMT6	Yes

(N) 代表 Nch, (P) 代表 Pch。
从MOSFET的构造上来讲,由于处在一个带电性的大环境下,可能会削弱或者破坏元器件本身,所以在使用的时候,一定要考虑到使用静电措施.

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Middle Power MOSFET

TUMT6	TSMT5	TSMT6	TSMT8	TSST8	MPT6

[单位:mm]

Drive Voltage (V)	I_D (A)	V_DSS(V)										RoHS
Drive Voltage (V)	I_D (A)	12	Package	20	Package	30	Package	45	Package	60	Package	RoHS
1.5	1.3	US6J11(P+P)	TUMT6	-	-	-	-	-	-	-	-	Yes
	1.5	-	-	US6M11(N+P)	TUMT6	-	-	-	-	-	-	Yes
	2	QS6J11(P+P)	TSMT6	-	-	-	-	-	-	-	-	Yes
	2.5	TT8J1(P+P)	TSST8	TT8J21(P+P) TT8K1(N+N) TT8M1(N+P) TT8M3(N+P)	TSST8 TSST8 TSST8 TSST8	-	-	-	-	-	-	Yes
	4	QS8J2(P+P)	TSMT8	-	-	-	-	-	-	-	-	Yes
	4.5	QS8J1(P+P)	TSMT8	-	-	-	-	-	-	-	-	Yes
1.8	1.5	-	-	US6K4(N+N)	TUMT6	-	-	-	-	-	-	Yes
2.5	1	-	-	-	-	QS6K1(N+N)	TSMT6	QS6K21(N+N)	TSMT6	-	-	Yes
	1.5	-	-	-	-	QS6M3(N+P) QS6M4(N+P) US6K1(N+N) US6M2(N+P)	TSMT6 TSMT6 TUMT6 TUMT6	-	-	-	-	Yes
	2	-	-	-	-	QS5K2(N+N)	TSMT5	-	-	-	-	Yes
	2.5	-	-	-	-	TT8K2(N+N)	TSST8	-	-	-	-	Yes
	3.5	-	-	-	-	QS8K2(N+N)	TSMT8	-	-	-	-	Yes
2.5/1.5	2.5	-	-	-	-	TT8M2(N+P)	TSST8	-	-	-	-	Yes
4	1.4	-	-	-	-	US6K2(N+N) US6M1(N+P)	TUMT6 TUMT6	-	-	-	-	Yes
	2	-	-	-	-	-	-	-	-	MP6K31(N+N)	MPT6	Yes
	2.5	-	-	-	-	TT8J2(P+P)	TSST8	-	-	-	-	Yes
	3.5	-	-	-	-	QS8M11(N+P)	TSMT8	-	-	-	-	Yes
	4	-	-	-	-	QS8J4(P+P)	TSMT8	QS8K21(N+N)	TSMT8	-	-	Yes
	5	-	-	-	-	MP6K12(N+N) QS8J5(P+P)	MPT6 TSMT8	-	-	-	-	Yes

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Middle Power MOSFET

SOP8

[单位:mm]

Drive Voltage (V)	I_D (A)	V_DSS(V)												RoHS
Drive Voltage (V)	I_D (A)	30	Package	45	Package	60	Package	80	Package	100	Package	250	Package	RoHS
4	3	-	-	-	-	-	-	-	-	SP8M51(N+P)	SOP8	-	-	Yes
	3.4	-	-	-	-	-	-	SH8M41(N+P)	SOP8	-	-	-	-	Yes
	3.5	SH8K5(N+N) SH8M2(N+P)	SOP8 SOP8	-	-	-	-	-	-	-	-	-	-	Yes
	4.5	SH8J62(P+P)	SOP8	SH8K22(N+N) SH8M24(N+P)	SOP8 SOP8	SH8K32(N+N)	SOP8	-	-	-	-	-	-	Yes
	5	SH8K1(N+N) SH8M3(N+P)	SOP8 SOP8	-	-	-	-	-	-	-	-	-	-	Yes
	6	SH8K2(N+N) SH8M5(N+P)	SOP8 SOP8	-	-	-	-	-	-	-	-	-	-	Yes
	7	SH8J65(P+P) SH8K3(N+N)	SOP8 SOP8	-	-	-	-	-	-	-	-	-	-	Yes
	9	SH8J66(P+P) SH8K4(N+N) SH8M4(N+P)	SOP8 SOP8 SOP8	-	-	-	-	-	-	-	-	-	-	Yes
10	3	-	-	-	-	-	-	-	-	-	-	SH8M70(N+P)	SOP8	Yes

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复合 MOSFET[ MOSFET + Diode ] / [ Diode + MOSFET ]

TUMT5	TSMT5	WEMT6	TSST8

[单位:mm]

Drive Voltage (V)	I_D (A)	V_DSS(V)								RoHS
Drive Voltage (V)	I_D (A)	12	Package	20	Package	30	Package	45	Package	RoHS
1.5	1.5	-	-	ES6U2(N+SBD)	WEMT6	-	-	-	-	Yes
	2.4	-	-	TT8U1(P+SBD) TT8U2(P+SBD)	TSST8 TSST8	-	-	-	-	Yes
	2.5	-	-	QS5U36(N+SBD)	TSMT5	-	-	-	-	Yes
1.8	1.3	ES6U1(P+SBD)	WEMT6	-	-	-	-	-	-	Yes
1.8	1.5	-	-	QS5U34(N+SBD)	TSMT5	-	-	-	-	Yes
2.5	1	-	-	ES6U42(P+SBD) US5U30(P+SBD) US5U38(P+SBD)	WEMT6 TUMT5 TUMT5	-	-	-	-	Yes
	1.5	-	-	QS5U21(P+SBD) QS5U23(P+SBD) QS5U26(P+SBD) QS5U27(P+SBD) QS6U22(P+SBD)	TSMT5 TSMT5 TSMT5 TSMT5 TSMT6	ES6U41(N+SBD) US5U1(N+SBD) US5U3(N+SBD) US6U37(N+SBD)	WEMT6 TUMT5 TUMT5 TUMT6	-	-	Yes
	2	-	-	QS5U28(P+SBD)	TSMT5	QS5U12(N+SBD) QS5U13(N+SBD) QS5U16(N+SBD) QS5U17(N+SBD)	TSMT5 TSMT5 TSMT5 TSMT5	-	-	Yes
4	0.7	-	-	-	-	-	-	US5U35(P+SBD)	TUMT5	Yes
	1	-	-	-	-	QS6U24(P+SBD)	TSMT6	-	-	Yes
	1.4	-	-	-	-	ES6U3(N+SBD) US5U2(N+SBD)	WEMT6 TUMT5	-	-	Yes
	2	-	-	-	-	QS5U33(P+SBD)	TSMT5	-	-	Yes

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复合三极管[ BIP TR + BIP TR ]

Configuration	Package		VMT6	EMT5	EMT6	UMT5 (SC-88A) <SOT-353>	UMT6 (SC-88) <SOT-363>	SMT5 (SC-74A)	SMT6 (SC-74) <SOT-457>	TUMT6	TSMT5	TSMT6	MPT6	V_CEO(V)	I_C(A)	h_FE^*2	RoHS
	Application	Equivalent circuit diagram (TOP View)
PNP+PNP	Pre Amp.		VT6T2	-		-		-		-	-		-	-50	-0.1	120～560	Yes
			-	EMT1		UMT1N		IMT1A		-	-		-	-50	-0.15	120～560	Yes
			VT6T1	-		-		-		-	-		-	-20	-0.2	120～560	Yes
			-	EMT18		UMT18N		IMT18		-	-		-	-12	-0.5	270～680	Yes
			-	-		-		IMT17		-	-		-	-50	-0.5	120～390	Yes
			-	-		-		-		-	-		MP6T12	-50	-1	180～450	Yes
			-	-		-		-		-	-		MP6T13	-50	-3	180～450	Yes
			-	-		-		IMT2A		-	-		-	-50	-0.15	120～560	Yes
			-	EMT2		UMT2N		-		-	-		-	-50	-0.15	120～560	Yes
			-	-		-		IMT4		-	-		-	-120	-0.05	180～820	Yes
			-	-		-		IMT3A		-	-		-	-50	-0.15	120～560	Yes
			-	EMT3		-		-		-	-		-	-50	-0.15	120～560	Yes
	Driver		-	-		-		-		US6T9	QST9		-	-30	-1	270～680	Yes
			-	-		-		-		US6T8	QST8		-	-12	-1.5	270～680	Yes
	Suitable for current mirror circuit		VT6T12	-		-		-		-	-		-	-50	-0.1	120～560	Yes
			VT6T11	-		-		-		-	-		-	-20	-0.2	120～560	Yes
NPN+NPN	Pre Amp.		-	EMX1		UMX1N		IMX1		-	-		-	50	0.15	120～560	Yes
			-	EMX26		-		-		-	-		-	50	0.15	820～2700	Yes
			-	-		-		IMX25		-	-		-	20	0.3	820～2700	Yes
			-	EMX28		-		-		-	-		-	30	0.4	270～680	Yes
			-	EMX18		UMX18N		-		-	-		-	12	0.5	270～680	Yes
			-	-		-		IMX9		-	-		-	20	0.5	560～2700	Yes
			-	-		-		IMX17		-	-		-	50	0.5	120～390	Yes
			-	-		-		-		-	-		MP6X12	50	1	180～450	Yes
			-	-		-		-		-	-		MP6X13	50	3	180～450	Yes
			-	-		-		IMX2		-	-		-	50	0.15	120～560	Yes
			-	EMX2		UMX2N		-		-	-		-	50	0.15	120～560	Yes
			-	-		-		IMX8		-	-		-	120	0.05	180～820	Yes
			-	-		-		IMX3		-	-		-	50	0.15	120～560	Yes
			-	EMX3		UMX3N		-		-	-		-	50	0.15	120～560	Yes
	High Frequency		-	-		-		IMX5		-	-		-	11	0.05	56～120	Yes
			-	-		-		IMX4		-	-		-	20	0.05	56～180	Yes
			-	-		UMX21N		-		-	-		-	6	0.05	180～560	Yes
			-	EMX5		UMX5N		-		-	-		-	11	0.05	56～120	Yes
			-	EMX4		UMX4N		-		-	-		-	20	0.05	56～180	Yes
	Driver		-	-		-		-		US6X8	QSX8		-	30	1	270～680	Yes
			-	-		-		-		US6X7	QSX7		-	12	1.5	270～680	Yes
	Suitable for current mirror circuit		VT6X2	-		-		-		-	-		-	50	0.1	120～560	Yes
			VT6X1	-		-		-		-	-		-	20	0.2	120～560	Yes
			VT6X12	-		-		-		-	-		-	50	0.1	120～560	Yes
			VT6X11	-		-		-		-	-		-	20	0.2	120～560	Yes
NPN+PNP	Amplifier		-	-		-		FMY1A		-	-		-	-50 50	-0.15	120～560	Yes
			-	EMY1		UMY1N		-		-	-		-	-50 50	-0.15	120～560	Yes
	Inverter Driver		-	-		-		FMY4A		-	-		-	-50 50	-0.15	120～560	Yes
	Pre Amp.		VT6Z2	-		-		-		-	-		-	-50 50	-0.1	120～560	Yes
			VT6Z1	-		-		-		-	-		-	-20 20	-0.2	120～560	Yes
			-	-		-		IMZ1A		-	-		-	50 50	0.15	120～560	Yes
			-	-		-		IMZ4		-	-		-	32 32	0.5	180～390	Yes
			-	EMZ1		UMZ1N		-		-	-		-	50 50	0.15	120～560	Yes
			-	EMZ7		-		-		-	-		-	12 12	0.5	270～680	Yes
			-	-		-		-		-	-		MP6Z12	50 50	1	180～450	Yes
			-	EMZ8		-		-		-	-		-	-12 50	-0.5	270～680	Yes
			-	-		-		IMZ2A		-	-		-	-50 50	-0.15	120～560	Yes
			-	EMZ2		UMZ2N		-		-	-		-	-50 50	-0.15	120～560	Yes
	DC-DC Converter		-	-		-		-		-	QSZ2		-	-30 30	-1.5	270～680	Yes
			-	-		-		-		-	QSZ1		-	-12 12	-2	270～680	Yes
			-	-		-		-		-	QSZ4		-	-30 30	-2	270～680	Yes
			-	-		-		-		-	QSZ3		-	-12 12	-3	270～680	Yes
			-	-		-		-		-	QS5Y2		-	-50 50	-3	180～450	Yes

* VMT6/EMT5/EMT6/UMT5/UMT6/TUMT5/TUMT6/TSMT5/TSMT6/MPT6封装的等价电路图的左下为1pin。
* SMT5/SMT6封装的等价电路图的右下为1pin。

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复合三极管[ MOSFET + BIP TR ] / [ BIP TR + MOSFET ]

Configuration	Package		EMT6	UMT6 (SC-88) <SOT-363>	V_CEO(V)	I_C(A)	h_FE^*2	RoHS
Configuration	Application	Equivalent circuit diagram (TOP View)			V_CEO(V)	I_C(A)	h_FE^*2	RoHS
BIP_PNP+MOS_Nch	Power Manegement		EMF6	UMF6N	-12 30	-0.5	270～680	Yes
BIP_NPN+MOS_Nch	Power Manegement		EMF9	UMF9N	12 30	0.5	270～680	Yes

* VMT6/EMT5/EMT6/UMT5/UMT6/TUMT5/TUMT6/TSMT5/TSMT6/MPT6封装的等价电路图的左下为1pin。
* SMT5/SMT6封装的等价电路图的右下为1pin。
从MOSFET的构造上来讲,由于处在一个带电性的大环境下,可能会削弱或者破坏元器件本身,所以在使用的时候,一定要考虑到使用静电措施.

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复合三极管[ BIP TR ＋ DTR ] ／ [ DTR ＋ BIP TR ]

Configuration	Package		EMT6	UMT6 (SC-88) <SOT-363>	V_CEO(V)	I_C(A)	h_FE^*2	RoHS
Configuration	Application	Equivalent circuit diagram (TOP View)			V_CEO(V)	I_C(A)	h_FE^*2	RoHS
BIP_PNP+DTR_NPN	Power Manegement		-	UMF28N	-50 50	-0.15	180～390	Yes
BIP_PNP+DTR_NPN	Power Manegement		EMF5	UMF5N	-12 50	-0.5	270～680	Yes
BIP_NPN+DTR_NPN	Power Manegement		EMF8	UMF8N	12 50	0.5	270～680	Yes

* VMT6/EMT5/EMT6/UMT5/UMT6/TUMT5/TUMT6/TSMT5/TSMT6/MPT6封装的等价电路图的左下为1pin。
* SMT5/SMT6封装的等价电路图的右下为1pin。

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复合三极管[ BIP TR + Diode ] / [ Diode + BIP TR ]

Configuration	Package		EMT6	UMT5 (SC-88A) <SOT-353>	UMT6 (SC-88) <SOT-363>	SMT5 (SC-74A)	TUMT5	TSMT5	V_CEO(V)	I_C(A)	h_FE^*2	RoHS
Configuration	Application	Equivalent circuit diagram (TOP View)							V_CEO(V)	I_C(A)	h_FE^*2	RoHS
BIP_PNP+Di	DC-DC Converter		-	UML1N		-	-	-	-50	-0.15	120～560	Yes
			-	UML4N		-	-	-	-12	-0.5	270～680	Yes
			-	-		FML9	-	-	-12	-1.5	270～680	Yes
			-	-		-	-	QSL11	-30	-1	270～680	Yes
			-	-		-	US5L9	QSL9	-12	-1.5	270～680	Yes
BIP_NPN+Di	DC-DC Converter		-	UML2N		-	-	-	50	0.15	120～560	Yes
			-	UML6N		-	-	-	12	0.5	270～680	Yes
			-	-		FML10	-	-	12	1.5	270～680	Yes
			-	-		-	US5L12	QSL12	30	1	270～680	Yes
			-	-		-	US5L10	QSL10	12	1.5	270～680	Yes
	Shunt Regulator		EML22	UML23N		-	-	-	50 Vz 6.8	0.15 Iz 5	120～270	Yes

* VMT6/EMT5/EMT6/UMT5/UMT6/TUMT5/TUMT6/TSMT5/TSMT6/MPT6封装的等价电路图的左下为1pin。
* SMT5/SMT6封装的等价电路图的右下为1pin。

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复合三极管[ MOSFET + DTR ] / [ DTR + MOSFET ]

Configuration	Package		EMT6	UMT6 (SC-88) <SOT-363>	V_CEO(V)	I_C(A)	h_FE^*2	RoHS
Configuration	Application	Equivalent circuit diagram (TOP View)			V_CEO(V)	I_C(A)	h_FE^*2	RoHS
DTR_PNP+MOS_Nch	Power Manegement		EMF32	UMF32N	-50 30	-0.1	100～600	Yes
DTR_PNP+MOS_Nch	Power Manegement		EMF33	-	-12 30	-0.5	140～	Yes

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复合三极管[ DTR + Diode ] / [ Diode + DTR ]

Configuration	Package		EMT5	EMT6	V_CEO(V)	I_C(A)	h_FE^*2	RoHS
	Application	Equivalent circuit diagram (TOP View)
DTR_PNP+Di	DC-DC Converter		EML17		-50 30	0.1	68～250	Yes
DTR_NPN+Di	DC-DC Converter		EML20		50 30	0.1	80～250	Yes

* VMT6/EMT5/EMT6/UMT5/UMT6/TUMT5/TUMT6/TSMT5/TSMT6/MPT6封装的等价电路图的左下为1pin。
* SMT5/SMT6封装的等价电路图的右下为1pin。

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复合数字晶体管[ DTR + DTR ] / [ DTR + DTR ]

Configuration	Package		EMT5	EMT6	UMT5 (SC-88A) <SOT-353>	UMT6 (SC-88) <SOT-363>	SMT5 (SC-74A)	SMT6 (SC-74) <SOT-457>	TUMT6	TSMT6	MPT6	Eqivalent element transistors	V_CC (V_CEO) (V)	IO (IC) (A)	GI (h_FE)	RoHS
	Application	Equivalent circuit diagram (TOP View)													Upper row: Tr1 The lower: Tr2
PNP+PNP	Potentional divider type		-		UMA9N		-		-	-	-	DTA114E×2	-50	-0.1	30～ -	Yes
			-		UMA1N		-		-	-	-	DTA124E×2	-50	-0.1	56～ -	Yes
			EMA2		UMA2N		-		-	-	-	DTA144E×2	-50	-0.1	68～ -	Yes
	Leak asorption type		EMA5		UMA5N		-		-	-	-	DTA123J×2	-50	-0.1	80～ -	Yes
	Potentional divider type		-		-		FMA9A		-	-	-	DTA114E×2	-50	-0.1	30～ -	Yes
			-		-		FMA1A		-	-	-	DTA124E×2	-50	-0.1	56～ -	Yes
			-		-		FMA2A		-	-	-	DTA144E×2	-50	-0.1	68～ -	Yes
	Leak asorption type		-		-		FMA5A		-	-	-	DTA123J×2	-50	-0.1	80～ -	Yes
	Input resistor type		EMA4		UMA4N		-		-	-	-	DTA114T×2	-50	-0.1	100～600 -	Yes
			EMA3		UMA3N		-		-	-	-	DTA143T×2	-50	-0.1	100～600 -	Yes
	Input resistor type		-		-		FMA4A		-	-	-	DTA114T×2	-50	-0.1	100～600 -	Yes
			-		-		FMA3A		-	-	-	DTA143T×2	-50	-0.1	100～600 -	Yes
	Potentional divider type		EMB11		UMB11N		IMB11A		-	-	-	DTA114E×2	-50	-0.1	30～ -	Yes
			EMB2		UMB2N		IMB2A		-	-	-	DTA144E×2	-50	-0.1	68～ -	Yes
	Leak asorption type		EMB10		UMB10N		IMB10A		-	-	-	DTA123J×2	-50	-0.1	80～ -	Yes
	Potentional divider type		EMB6		UMB6N		-		-	-	-	DTA144E×2	-50	-0.1	68～ -	Yes
	Input resistor type		EMB3		UMB3N		IMB3A		-	-	-	DTA143T×2	-50	-0.1	100～600 -	Yes
NPN+NPN	Potentional divider type		EMG9		UMG9N		-		-	-	-	DTC114E×2	50	0.1	30～ -	Yes
			EMG1		UMG1N		-		-	-	-	DTC124E×2	50	0.1	56～ -	Yes
			EMG2		UMG2N		-		-	-	-	DTC144E×2	50	0.1	68～ -	Yes
	Potentional divider type		-		-		FMG9A		-	-	-	DTC114E×2	50	0.1	30～ -	Yes
			-		-		FMG1A		-	-	-	DTC124E×2	50	0.1	56～ -	Yes
			-		-		FMG2A		-	-	-	DTC144E×2	50	0.1	68～ -	Yes
	Input resistor type		EMG4		UMG4N		-		-	-	-	DTC114T×2	50	0.1	100～600 -	Yes
			EMG3		UMG3N		-		-	-	-	DTC143T×2	50	0.1	100～600 -	Yes
			EMG6		UMG6N		-		-	-	-	DTC144T×2	50	0.1	100～600 -	Yes
	Input resistor type		-		-		FMG4A		-	-	-	DTC114T×2	50	0.1	100～600 -	Yes
			-		-		FMG3A		-	-	-	DTC143T×2	50	0.1	100～600 -	Yes
			-		-		FMG6A		-	-	-	DTC144T×2	50	0.1	100～600 -	Yes
	Potentional divider type		EMH11		UMH11N		IMH11A		-	-	-	DTC114E×2	50	0.1	30～ -	Yes
			EMH1		UMH1N		IMH1A		-	-	-	DTC124E×2	50	0.1	56～ -	Yes
			EMH2		UMH2N		IMH2A		-	-	-	DTC144E×2	50	0.1	68～ -	Yes
	Leak asorption type		EMH9		UMH9N		IMH9A		-	-	-	DTC114Y×2	50	0.1	68～ -	Yes
	Potentional divider type		-		UMH5N		-		-	-	-	DTC124E×2	50	0.1	56～ -	Yes
			EMH6		UMH6N		-		-	-	-	DTC144E×2	50	0.1	68～ -	Yes
	Potentional divider type		-		-		IMH5A		-	-	-	DTC124E×2	50	0.1	56～ -	Yes
			-		-		IMH6A		-	-	-	DTC144E×2	50	0.1	68～ -	Yes
	Input resistor type		EMH4		UMH4N		IMH4A		-	-	-	DTC114T×2	50	0.1	100～600 -	Yes
			EMH3		UMH3N		IMH3A		-	-	-	DTC143T×2	50	0.1	100～600 -	Yes
			EMH15		-		IMH15A		-	-	-	DTC144T×2	50	0.1	100～600 -	Yes
			-		-		IMH21		-	-	-	DTC614T×2	20	0.6	820～2700 -	Yes
			-		-		IMH23		US6H23	-	-	DTC643T×2	20	0.6	820～2700 -	Yes
	Input resistor type		-		UMH8N		-		-	-	-	DTC114T×2	50	0.1	100～600 -	Yes
			-		UMH14N		-		-	-	-	DTC144T×2	50	0.1	100～600 -	Yes
	Input resistor type		-		-		IMH8A		-	-	-	DTC114T×2	50	0.1	100～600 -	Yes
			-		-		IMH14A		-	-	-	DTC144T×2	50	0.1	100～600 -	Yes
	Input resistor type		-		-		-		-	QSH29	-	DTDG14GP×2	60±10	0.5	500～ -	Yes
	Driver		-		-		-		-	-	MP6H1	DTDG01GP×2	60±10	1	300～ -	Yes
PNP+NPN	Potentional divider type		EMD3		UMD3N		-		-	-	-	DTA114E×DTC114E	50 -50	0.1 -0.1	30～ 30～	Yes
			EMD2		UMD2N		-		-	-	-	DTA124E×DTC124E	50	0.1	56～ -	Yes
			EMD12		UMD12N		-		-	-	-	DTA144E×DTC144E	50 -50	0.1 -0.1	68～ 68～	Yes
	Leak asorption type		EMD38		-		-		-	-	-	DTA113Z×DTC114Y	50 -50	0.1 -0.1	68～ 33～	Yes
			EMD9		UMD9N		-		-	-	-	DTA114Y×DTC114Y	50 -50	0.1 -0.1	68～ 68～	Yes
			EMD4		UMD4N		-		-	-	-	DTA114Y×DTC144E	50 -50	0.1 -0.1	68～ 68～	Yes
			EMD5		UMD5N		-		-	-	-	DTA143X×DTC144E	50 -50	0.1 -0.1	68～ 30～	Yes
			EMD22		UMD22N		-		-	-	-	DTA143Z×DTC143Z	50 -50	0.1 -0.1	80～ 80～	Yes
	Potentional divider type		-		-		IMD3A		-	-	-	DTA114E×DTC114E	50 -50	0.1 -0.1	30～ 30～	Yes
			-		-		IMD2A		-	-	-	DTA124E×DTC124E	50 -50	0.1 -0.1	56～ 56～	Yes
	Leak asorption type		-		-		IMD9A		-	-	-	DTA114Y×DTC114Y	50 -50	0.1 -0.1	68～ 68～	Yes
	Input resistor type		EMD6		UMD6N		-		-	-	-	DTA143T×DTC143T	50 -50	0.1 -0.1	100～600 ～600	Yes
	Input resistor type		-		-		IMD6A		-	-	-	DTA143T×DTC143T	50 -50	0.1 -0.1	100～600 ～600	Yes
	Power management		EMD29		-		-		-	-	-	DTB513Z×DTC114E	-12 50	-0.5 0.1	140～ 30～	Yes
			EMD30		-		-		-	-	-	DTB713Z×DTC114E	-30 50	0.2 0.1	140～ 30～	Yes
	Power management		-		-		IMD10A		-	-	-	- ×DTC114T	-50 50	-0.5 0.1	68～ -	Yes
			-		-		IMD16A		-	-	-	- ×DTC115T	-50 50	-0.5 0.1	82～ -	Yes