IC

分立式半导体

光学器件

无源元件

模块

  • LAPIS Semiconductor
  • Kionix
  • ECO Devices

光斩波器双层塑胶型

RPI-1133

关于这个产品的询问
数据表
数据表 (68K)
技术资料
焊接条件
品名的构成
使用上的注意事项
RoHS指令对应信息

印刷用页

外观

RPI-1133 Outline

Small Type

外形尺寸

RPI-1133 Dimensions

* 点击放大

[ 产品概要 ]

罗姆的光传感器是一种可以发现变化的电子眼,可以对应所有的动作的检测,也可以应对日益发展的客户需求.

特长

・间距宽度1.1mm
・小型双列直插型

产品规格

绝对最大额定值 (Tc=25ºC)
Rated parameters Standard value Conditions
Input(LED)
Forward current IF(mA) 50  
Reverse voltage VR(V) 5  
Power dissipation PD(mW) 80  
Collector-Emitter voltage VCEO -  
Output(Photo-toransistor)
Emitter-Collector voltage VECO -  
Collector current IC -  
Power dissipation PC -  
Temperature Characteristics
Operating temperature Topr(°C) -20 ~ 60  
Storage temperature Tstg(°C) -40 ~ 100  
电气.光学特性 (Ta=25ºC)
Parameters Value Conditions
Input Characteristics
Input Characteristics||Forward voltage VF(V) 1.1 IF=10mA
Input Characteristics||Reverse current IR -  
Output Characteristics
Output Characteristics||Dark current-Max. ICEO -  
Output Characteristics||Peak sensitivity wavelength λP -  
Transfer Characteristics
Transfer Characteristics||Collector current-Max. IC -  
Transfer Characteristics||Collector-Emitter saturation voltage-Max. VCE(sat) -  
Transfer Characteristics||Response time tr·tf -  
Infrared Light Emitting Diode
Infrared Light Emitting Diode||Cut-off frequency FC - IF=50mA
* Non-coherent Infrared light emitting diode used.
Infrared Light Emitting Diode||Peak light emitting wavelength λP -  
Phototransistor
Phototransistor||Response time tr·tf -  
Phototransistor||Maximum sensitivity wavelength λP -  

*所述内容会因改良等原因而发生变更，恕不另行通知。
使用时请务必获取最新的规格书，以便确认。



产品状况

Part No. Status
*1		 RoHS Packing
style		 Package
quantity		 Sales
RPI-1133B Active Yes Plastic bag 2000 Inquiry

*1 Active：量产体制  Preparation：事前准备  Preview：开发中


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其他产品线

其他产品线请参照产品一览。

 光传感器

2010.10.15

新型无接触动作功能的单芯片光学式近接/照度传感器IC