| 电气.光学特性 (Ta=25ºC) |
| Parameters |
Value |
Conditions |
| Input Characteristics |
| Input Characteristics||Forward voltage VF(V) |
1.40 |
IF=10mA |
| Input Characteristics||Reverse current IR(µA) |
10 |
VR=5V |
| Output Characteristics |
| Output Characteristics||Dark current-Max. ICEO(µA) |
0.5 |
VCE=10V |
| Output Characteristics||Peak sensitivity wavelength λP(nm) |
800 |
|
| Transfer Characteristics |
| Transfer Characteristics||Collector current-Max. IC(mA) |
0.2 |
VCE=5V,IF=10mA |
| Transfer Characteristics||Collector-Emitter saturation voltage-Max. VCE(sat)(V) |
0.4 |
IF=10mA,IC=0.1mA |
| Transfer Characteristics||Response time tr·tf(µs) |
10 |
VCC=5V,IF=20mA,RL=100Ω |
| Infrared Light Emitting Diode |
| Infrared Light Emitting Diode||Cut-off frequency FC |
- |
|
| Infrared Light Emitting Diode||Peak light emitting wavelength λP(nm) |
850 |
IF=50mA * Non-coherent Infrared light emitting diode used. |
| Phototransistor |
| Phototransistor||Response time tr·tf(µs) |
10 |
VCC=5V,IF=1mA,RL=100Ω * This product is not designed ~ be protected against electromagnetic wave. |
| Phototransistor||Maximum sensitivity wavelength λP(nm) |
800 |
| |