SCT4036KW7
1200V, 40A, 7引脚SMD, 沟槽结构, SiC MOSFET

SCT4036KW7是一款1200V、40A的Nch SiC功率MOSFET。该产品采用沟槽结构实现了更低的导通电阻，

ROHM的第4代SiC MOSFET
SCT4系列是改善了短路耐受时间并实现了业界超低导通电阻的第4代产品。与以往产品相比，该系列产品的导通电阻降低了约40%，开关损耗降低了约50%。另外，该产品还支持更容易处理的15V栅-源电压，使应用产品的设计更容易。

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* 本产品是标准级的产品。
本产品不建议使用于车载设备。
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主要规格

 
型号 | SCT4036KW7TL
Status | 推荐品
封装 | TO-263-7L
包装数量 | 1000
最小独立包装数量 | 1000
包装形态 | Taping
RoHS | Yes

特性：

Drain-source Voltage[V]

1200

Drain-source On-state Resistance(Typ.)[mΩ]

36

Generation

4th Gen (Trench)

Drain Current[A]

40

Total Power Dissipation[W]

150

Junction Temperature(Max.)[°C]

175

Storage Temperature (Min.)[°C]

-40

Storage Temperature (Max.)[°C]

175

Package Size [mm]

10.2x15.4 (t=4.7)

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特点：

  • Low on-resistance
  • Fast switching speed
  • Fast reverse recovery
  • Easy to parallel
  • Simple to drive
  • Pb-free lead plating ; RoHS compliant

Reference Design / Application Evaluation Kit

 
    • Evaluation Board - HB2637L-EVK-301

    • The evaluation board is configured in a half bridge set up and thus allows evaluations in different operations modes such as buck, boost, synchronous buck/boost and inverter operations. The board is equipped with two SiC MOSFETs(SCT4036KW7), isolated gate driver BM61S41RFV-C, isolated power supply required for the gate driver, LDO for 5V supply and easy to interface connectors for PWM signals.

    • User Guide
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