SCZ4006KTA (新产品)
DOT-247 (2合1), 1200V, 209A, 半桥, SiC功率模块
SCZ4006KTA (新产品)
DOT-247 (2合1), 1200V, 209A, 半桥, SiC功率模块
SCZ4006KTA是一款1200V额定SiC模制模块。DOT-247的特点是将两个分立的TO-247封装结合在一起，从而实现高功率密度。其2合1配置适用于各种电路拓扑；它提供半桥和共源两种拓扑选择，还支持多电平电路，如3电平NPC、3电平T-NPC和5电平ANPC。
DOT-247是光伏逆变器、UPS系统和半导体继电器等工业设备的理想选择。
主要规格
特性：
Drain-source Voltage[V]
1200
Drain Current[A]
209
Total Power Dissipation[W]
704
Drain-source On-state Resistance(Typ.)[mΩ]
6
Junction Temperature (Max.) [℃]
175
Storage Temperature (Min.) [℃]
-40
Storage Temperature (Max.) [℃]
125
Package
Half-Bridge
Package Size [mm]
26.45x31.5 (t=5.25)
特点：
- 搭载第四代SiC-MOSFET的DOT247封装
- VDSS = 1200V
- 更低RDS(on)
- 可实现高速开关
- 更低开关损耗
- Tvjmax = 175°C
- 紧凑型设计
- 高功率密度
参考设计 / 应用评估套件
-
- Reference Design - REF68023
- SCZ4006KTAC23-EVK001 Three Phase Inverter Evaluation Board
This SCZ4006KTAC23-EVK-001 provides detailed specifications for a 3-phase inverter that utilizes Silicon Carbide (SiC) MOSFETs.
The SCZ4006KTAC23-EVK-001 is a reference design platform for evaluating a three-phase inverter system utilizing ROHM's 4th Generation SiC MOSFETs in a DOT-247 package. This evaluation kit includes a power board, gate drive board, and sensing board, offering a comprehensive solution for high-efficiency power conversion applications upto 10kVA.
This reference design includes comprehensive design resources such as schematics, bill of materials (BOM), and PCB layout files. It features a reference board built with DOT-247 package SiC MOSFETs, optimized for high-performance three-phase inverter applications.We encourage to explore the advanced control capabilities of this EVK and consider its integration into your future power electronics development projects.
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