RS1G120MN
Nch 40V 34A 功率MOSFET
RS1G120MN
RS1G120MN
Nch 40V 34A 功率MOSFET
场效应晶体管MOSFET。通过采用微细工艺的“超低导通电阻元件”，为用户提供应用广泛的功率MOSFET。根据用途备有小型、大功率、复合化的丰富产品阵容，可满足多样的市场需求。
主要规格
特性：
Package Code
HSOP8S (5x6)
Applications
Switching
Number of terminal
8
Polarity
Nch
Drain-Source Voltage VDSS[V]
40
Drain Current ID[A]
34
RDS(on)[Ω] VGS=4.5V(Typ.)
0.0156
RDS(on)[Ω] VGS=10V(Typ.)
0.0116
RDS(on)[Ω] VGS=Drive (Typ.)
0.0156
Total gate charge Qg[nC]
4.4
Power Dissipation (PD)[W]
25
Drive Voltage[V]
4.5
Mounting Style
Surface mount
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
150
Package Size [mm]
5x6 (t=1.1)
特点：
- Low on-resistance
- High power package (HSOP8)
- Pb-free lead plating ; RoHS compliant
- Halogen free
- 100% Rg and UIS tested
