新设计非推荐
US5L12
Complex Transistor(BIP+Diode)
US5L12
主要规格
特性：
Package Code
SOT-353T
JEITA Package
SC-113CA
Number of terminal
5
Polarity
NPN+Di
Collector Power dissipation PC[W]
0.4
Collector-Emitter voltage VCEO1[V]
30
Collector current Io(Ic) [A]
1
hFE
270 to 680
hFE (Min.)
270
hFE (Max.)
680
hFE (Diode)
25
Reverse voltage VR (Diode) [V]
20
Forward Current IF (Diode) [A]
0.7
Forward Current Surge Peak IFSM (Diode) [A]
3
Mounting Style
Surface mount
Equivalent (Single Part)
2SB1689 / RB461F
Storage Temperature (Min.)[°C]
-40
Storage Temperature (Max.)[°C]
125
Package Size [mm]
2x2.1 (t=0.85)
