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SiC功率元器件

与Si半导体相比,SiC功率元件可进一步实现小型化、低功耗及高效化。它在高温环境下具备优良的工作特性,且开关损耗更低,作为新一代低损耗元件,备受期待。
SiC功率器件的使用手册 、请点击这里Datasheet

FAQ 
  • 肖特基势垒二极管 (51)

    因为Total Capacitive Charge(Qc)小、可以降低开关损失,实现高速开关。而且,Si快速恢复二极管的trr会随着温度上升而增大,而SiC则可以维持大体一定的特性。

     
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  • SiCMOSFET (21)

    开关时的差动放大电流原则上是没有的,所以可以高速运作,开关损失降低。 小尺寸芯片的导通电阻低,所以实现低容量・低门极消耗。 Si产品随温度的上升导通电阻上升2倍以上,SiC的导通电阻上升小,可以实现整机的小型化和节能化。

     
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  • SiC功率模块 (7)

    内置的功率半导体元件全部由SiC构成,与Si(硅)材质的IGBT模块相比,可大幅降低开关损耗。 内置SiC-SBD、SiC-MOSFET,与传统的Si-IGBT相比,在100KHz以上的高频环境下工作成为可能。

     
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  • SiC Schottky Barrier Diodes Bare Die (10)

    The total capacitive charge (Qc) is small, reducing switching loss, enabling high-speed switching operation. In addition, unlike Si-based fast recovery diodes where the trr increases along with temperature, Silicon carbide (SiC) devices maintain constant characteristics, resulting in better performance.
    For sale of Bare Die, please contact the specifications in our sales office. Currently, we don't sell Bare Die on the internet distributors now.

  • SiC MOSFET Bare Die (16)

    In principle, there is no tail current during switching, resulting in faster operation and reduced switching loss. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. SiC exhibits minimal ON resistance increases and provides greater package miniaturization, and energy savings than Si devices, in which the ON resistance can more than double with increased temperature.
    For sale of Bare Die, please contact the specifications in our sales office. Currently, we don't sell Bare Die on the internet distributors now.