BM60212FV-C
1200V耐压 高边/低边驱动器
BM60212FV-C
BM60212FV-C
1200V耐压 高边/低边驱动器
BM60212FV-C是可驱动使用阴极负载方式的Nch-MOSFET及IGBT的1200V高耐压高边/低边驱动器。内置内置镜夹功能/低电压时误动作防止功能（UVLO）。
主要规格
功能安全:
类别 : FS supportive
A product that has been developed for automotive use and is capable of supporting safety analysis with regard to the functional safety.
特性：
Channel
2
High-side floating supply voltage [V]
1200
Turn-on/off time (Typ.) [ns]
55
Vcc(Min.)[V]
10
Vcc(Max.)[V]
24
Operating Temperature (Min.)[°C]
-40
Operating Temperature (Max.)[°C]
125
Package Size [mm]
6.5x8.1 (t=2.01)
Common Standard
AEC-Q100 (Automotive Grade)
特点：
- AEC-Q100 Qualified(Grade 1)
- High-Side Floating Supply Voltage 1200V
- Active Miller Clamping
- Under Voltage Lockout Function
- 3.3V and 5.0V Input Logic Compatible
Reference Design / Application Evaluation Kit
-
- Evaluation Board - BM60212FV-EVK001
The BM60212FV-EVK001 board can be driving IGBT Power Devices for High-side and Low-side on Half-Bridge application. The BM60212FV-C has Power Supply protections which are the Under-Voltage Lockout (UVLO) function at VCCA and VCCB. The Active Miller Clamping is included for gate control. The BM60212FV-EVK001 allows designers to evaluate Rohm’s Gate Driver family for various applications.
