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SPI BUS EEPROM_BR25G512FVT-3

BR25G512-3FVT是512Kbit SPI BUS 接口的串行EEPROM。

* 本产品是标准级的产品。本产品不建议使用的车载设备。
型号
Status
封装
包装数量
最小独立包装数量
包装形态
RoHS
BR25G512FVT-3GE2 供应中 TSSOP-B8 3000 3000 Taping Yes
 
特性:
Grade Standard
I/F SPI BUS
Density [bit] 512K
Bit Format [Word x Bit] 64K x 8
Package TSSOP-B8
Operating Temperature (Min.)[°C] -40
Operating Temperature (Max.)[°C] 85
Vcc(Min.)[V] 1.8
Vcc(Max.)[V] 5.5
Circuit Current (Max.)[mA] 4.0
Standby Current (Max.)[μA] 1.0
Write Cycle (Max.)[ms] 5.0
Input Frequency (Max.)[Hz] 10M
Endurance (Max.)[Cycle] 106
Data Retention (Max.)[Year] 100
特点:
    • High Speed Clock Action up to 10MHz (Max)
    • Wait Function by HOLDB Terminal
    • Part or Whole of Memory Arrays Settable as Read only Memory Area by Program
    • 1.8V to 5.5V Single Power Source Operation Most Suitable for Battery Use
    • Up to 128 Bytes in Page Write Mode.
    • For SPI BUS interface (CPOL, CPHA) = (0, 0), (1, 1)
    • Self-timed Programming Cycle
    • Low Current Consumption
      ·At Write Action (5V) : 0.7mA (Typ)
      ·At Read Action (5V) : 2.4mA (Typ)
      ·At Standby Action (5V) : 0.1µA (Typ)
    • Address Auto Increment Function at Read Action
    • Prevention of Write Mistake
      ·Write Prohibition at Power On
      ·Write Prohibition by Command Code (WRDI)
      ·Write Prohibition by WPB Pin
      ·Write Prohibition Block Setting by Status Registers (BP1, BP0)
      ·Prevention of Write Mistake at Low Voltage
    • More than 100 years Data Retention
    • More than 1 Million Write Cycles
    • Bit Format 64K×8
    • Initial Delivery Data
      Memory Array: FFh
      Status Register: WPEN, BP1, BP0 : 0
 
 
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PART NUMBER Product Name Package Datasheet Distribution Inventory
BR25G512F-3 SPI BUS EEPROM SOP8   购买
BR25G512FJ-3 SPI BUS EEPROM SOP-J8   购买
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技术信息
Thermal Resistance

The definition and how to use thermal resistance and thermal characterization parameter of packages for ROHM’s integrated circuit are described in this application note.