BR25H040F-2LB(H2)
125℃工作 SPI BUS 4kbit(512x8bit) EEPROM
BR25H040F-2LB(H2)
BR25H040F-2LB(H2)
125℃工作 SPI BUS 4kbit(512x8bit) EEPROM
本产品是面向工业设备市场的产品，保证可长期稳定供货。 是适合这些用途的产品。
BR25H040F-2LB是SPI BUS接口方式的串行EEPROM。
主要规格
特性：
Series
BR25H-2LB
Density [bit]
4K
Bit Format [Word x Bit]
512 x 8
Vcc(Min.)[V]
2.5
Vcc(Max.)[V]
5.5
Circuit Current (Max.)[mA]
4
Standby Current (Max.)[μA]
10
Write Cycle (Max.)[ms]
4
Input Frequency (Max.)[Hz]
10M
Endurance (Max.)[Cycle]
106
Data Retention (Max.)[Year]
40
I/F
SPI BUS
Operating Temperature (Min.)[°C]
-40
Operating Temperature (Max.)[°C]
125
Package Size [mm]
5x6.2 (t=1.71)
特点：
· Long time support a product for Industrial applications.· High speed clock action up to 10MHz (Max.)
· Wait function by HOLDB terminal.
· Part or whole of memory arrays settable as read only memory area by program.
· 2.5V to 5.5V single power source action most suitable for battery use.
· Page write mode useful for initial value write at factory shipment.
· For SPI bus interface (CPOL, CPHA)=(0, 0), (1, 1)
· Self-timed programming cycle.
· Low Supply Current At write operation (5V) : 1.0mA (Typ.) At read operation (5V) : 1.0mA (Typ.) At standby operation (5V) : 0.1µA (Typ.)
· Address auto increment function at read operation
· Prevention of write mistake Write prohibition at power on. Write prohibition by command code (WRDI). Write prohibition by WPB pin. Write prohibition block setting by status registers (BP1, BP0). Prevention of write mistake at low voltage.
· Data at shipment Memory array: FFh, status register BP1, BP0 : 0
· More than 100 years data retention.
· More than 1 million write cycles.
