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1.5V Drive Pch+SBD MOSFET_ES6U1电界效果晶体管MOSFET。通过融合采用细微流程的低阻值MOSFET与肖特基二极管（SBD）形成了多种产品线来对应多样的市场需求。
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| * 本产品是标准级的产品。本产品不建议使用的车载设备。 | ||||
特性：
| Grade | Standard |
| Package Code | SOT-563T |
| JEITA Package | SC-120 |
| Package Size[mm] | 1.6x1.6(t=0.6) |
| Number of terminal | 6 |
| Polarity | Pch+Schottky |
| Drain-Source Voltage VDSS[V] | -12 |
| Drain Current ID[A] | -1.3 |
| RDS(on)[Ω] VGS=1.5V (Typ.) | 0.53 |
| RDS(on)[Ω] VGS=2.5V (Typ.) | 0.28 |
| RDS(on)[Ω] VGS=4.5V (Typ.) | 0.19 |
| RDS(on)[Ω] VGS=Drive (Typ.) | 0.53 |
| Total gate charge Qg[nC] | 2.4 |
| Power Dissipation (PD)[W] | 0.7 |
| Drive Voltage[V] | -1.5 |
| Reverse voltage VR (Diode) [V] | 20.0 |
| Forward Current IF (Diode) [A] | 0.5 |
| Forward Current Surge Peak IFSM (Diode) [A] | 2.0 |
| Mounting Style | Surface mount |
| Storage Temperature (Min.)[°C] | -55 |
| Storage Temperature (Max.)[°C] | 150 |
应用：
引脚配置图：
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技术信息
Taping Specifications
For Transistors
Condition Of Soldering
For Surface Mount Type
Storage Conditions
For Transistors
Operation Notes
About TR Die Temperature
Operation Notes
Before using ROHM Transistor
Part Explanation
For Transistors