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10V驱动型 Nch MOSFET_R6009ENX

场效应晶体管MOSFET。通过采用微细工艺的“超低导通电阻元件”,为用户提供应用广泛的功率MOSFET。根据用途备有小型、大功率、复合化的丰富产品阵容,可满足多样的市场需求。

* 本产品是标准级的产品。本产品不建议使用的车载设备。
型号
Status
封装
包装数量
最小独立包装数量
包装形态
RoHS
R6009ENX 供应中 TO-220FM 500 500 Bulk Yes
 
特性:
Grade Standard
Package Code TO-220FM
Package Size[mm] 15.1x10.1 (t=4.6)
Number of terminal 3
Polarity Nch
Drain-Source Voltage VDSS[V] 600
Drain Current ID[A] 9.0
RDS(on)[Ω] VGS=10V (Typ.) 0.5
RDS(on)[Ω] VGS=Drive (Typ.) 0.5
Total gate charge Qg[nC] 23.0
Power Dissipation (PD)[W] 40.0
Drive Voltage[V] 10.0
Mounting Style Leaded type
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 150
特点:
  • ・ Low on-resistance.
    ・ Fast switching speed.
    ・ Gate-source voltage (VGSS) guaranteed to be ±20V.
    ・ Drive circuits can be simple.
    ・ Parallel use is easy.
    ・ Pb-free lead plating ; RoHS compliant
 
 
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技术信息
Reference Circuit

PFC Critical Current Mode 1P Pin=200W

Reference Circuit

PFC Critical Current Mode 2P-Interleave Pin=400W

Reference Circuit

PFC Critical Current Mode 3P-Interleave Pin=600W

SPICE Simulation Evaluation Circuit Data

PFC Critical Current Mode 1P Pin=200W

SPICE Simulation Evaluation Circuit Data

PFC Critical Current Mode 2P-Interleave Pin=400W

SPICE Simulation Evaluation Circuit Data

PFC Critical Current Mode 3P-Interleave Pin=600W

Taping Specifications

For Transistors

Storage Conditions

For Transistors

Operation Notes

About TR Die Temperature

Operation Notes

Before using ROHM Transistor

Part Explanation

For Transistors