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10V驱动型 Nch MOSFET_R6009ENX场效应晶体管MOSFET。通过采用微细工艺的“超低导通电阻元件”，为用户提供应用广泛的功率MOSFET。根据用途备有小型、大功率、复合化的丰富产品阵容，可满足多样的市场需求。
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| * 本产品是标准级的产品。本产品不建议使用的车载设备。 | ||||
特性：
| Grade | Standard |
| Package Code | TO-220FM |
| Package Size[mm] | 15.1x10.1 (t=4.6) |
| Applications | Power Supply |
| Number of terminal | 3 |
| Polarity | Nch |
| Drain-Source Voltage VDSS[V] | 600 |
| Drain Current ID[A] | 9.0 |
| RDS(on)[Ω] VGS=10V (Typ.) | 0.5 |
| RDS(on)[Ω] VGS=Drive (Typ.) | 0.5 |
| Total gate charge Qg[nC] | 23.0 |
| Power Dissipation (PD)[W] | 40.0 |
| Drive Voltage[V] | 10.0 |
| Mounting Style | Leaded type |
| Storage Temperature (Min.)[°C] | -55 |
| Storage Temperature (Max.)[°C] | 150 |
特点：
- ・ Low on-resistance.
・ Fast switching speed.
・ Gate-source voltage (VGSS) guaranteed to be ±20V.
・ Drive circuits can be simple.
・ Parallel use is easy.
・ Pb-free lead plating ; RoHS compliant
应用：
引脚配置图：
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技术信息
Reference Circuit
PFC Critical Current Mode 1P Pin=200W
Reference Circuit
PFC Critical Current Mode 2P-Interleave Pin=400W
Reference Circuit
PFC Critical Current Mode 3P-Interleave Pin=600W
SPICE Simulation Evaluation Circuit Data
PFC Critical Current Mode 1P Pin=200W
SPICE Simulation Evaluation Circuit Data
PFC Critical Current Mode 2P-Interleave Pin=400W
SPICE Simulation Evaluation Circuit Data
PFC Critical Current Mode 3P-Interleave Pin=600W
Taping Specifications
For Transistors
Storage Conditions
For Transistors
Operation Notes
About TR Die Temperature
Operation Notes
Before using ROHM Transistor
Part Explanation
For Transistors