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10V驱动型 Nch MOSFET_R6020ENJ

场效应晶体管MOSFET。通过采用微细工艺的“超低导通电阻元件”,为用户提供应用广泛的功率MOSFET。根据用途备有小型、大功率、复合化的丰富产品阵容,可满足多样的市场需求。

* 本产品是标准级的产品。本产品不建议使用的车载设备。
型号
Status
封装
包装数量
最小独立包装数量
包装形态
RoHS
R6020ENJTL 供应中 LPTS(D2PAK) 1000 1000 Taping Yes
 
特性:
Grade Standard
Package Code TO-263(D2PAK)
JEITA Package SC-83
Package Size[mm] 10.1x13.1(t=4.5)
Number of terminal 3
Polarity Nch
Drain-Source Voltage VDSS[V] 600
Drain Current ID[A] 20.0
RDS(on)[Ω] VGS=10V (Typ.) 0.17
RDS(on)[Ω] VGS=Drive (Typ.) 0.17
Total gate charge Qg[nC] 60.0
Power Dissipation (PD)[W] 40.0
Drive Voltage[V] 10.0
Mounting Style Surface mount
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 150
特点:
  • ・ Low on-resistance.
    ・ Fast switching speed.
    ・ Gate-source voltage (VGSS) guaranteed to be ±20V.
    ・ Drive circuits can be simple.
    ・ Parallel use is easy.
    ・ Pb-free lead plating ; RoHS compliant
 
 
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技术信息
Taping Specifications

For Transistors

Condition Of Soldering

For Surface Mount Type

Storage Conditions

For Transistors

Operation Notes

About TR Die Temperature

Operation Notes

Before using ROHM Transistor

Part Explanation

For Transistors