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10V驱动型 Nch MOSFET_R6025FNZ

Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

* 本产品是标准级的产品。本产品不建议使用的车载设备。
型号
Status
封装
包装数量
最小独立包装数量
包装形态
RoHS
R6025FNZC8 供应中 TO-3PF 360 360 Bulk Yes
 
特性:
Grade Standard
Package Code TO-3PF
Number of terminal 3
Polarity Nch
Drain-Source Voltage VDSS[V] 600
Drain Current ID[A] 25.0
RDS(on)[Ω] VGS=10V (Typ.) 0.14
RDS(on)[Ω] VGS=Drive (Typ.) 0.14
Total gate charge Qg[nC] 85.0
Power Dissipation (PD)[W] 150.0
Drive Voltage[V] 10.0
Trr (Typ.)[ns] 120
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 150
特点:
  • ・10V驱动型 Nch 功率MOSFET
 
 
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技术信息
Taping Specifications

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Storage Conditions

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Operation Notes

About TR Die Temperature

Operation Notes

Before using ROHM Transistor

Part Explanation

For Transistors