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Nch 30V 8A 中功率MOSFET_RQ3E080BN

RQ3E080BN是大功率封装(HSMT8)的中功率MOSFET。

* 本产品是标准级的产品。本产品不建议使用的车载设备。
型号
Status
封装
包装数量
最小独立包装数量
包装形态
RoHS
RQ3E080BNTB 供应中 HSMT8 3000 3000 Taping Yes
 
特性:
Grade Standard
Package Code HSMT8(3.3x3.3)
Package Size[mm] 3.3x3.3(t=0.8)
Applications Switching, Motor
Number of terminal 8
Polarity Nch
Drain-Source Voltage VDSS[V] 30
Drain Current ID[A] 15.0
RDS(on)[Ω] VGS=4.5V (Typ.) 0.016
RDS(on)[Ω] VGS=10V (Typ.) 0.011
RDS(on)[Ω] VGS=Drive (Typ.) 0.016
Total gate charge Qg[nC] 7.2
Power Dissipation (PD)[W] 14.0
Drive Voltage[V] 4.5
Mounting Style Surface mount
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 150
特点:
    • Low on - resistance.
    • High Power Package (HSMT8).
    • Pb-free lead plating; RoHS compliant.
    • Halogen Free
 
 
引脚配置图:
Pin Configration
 
 
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技术信息
Condition Of Soldering

For Surface Mount Type

Operation Notes

About TR Die Temperature

Operation Notes

Before using ROHM Transistor

Taping Specifications

For Transistors

Storage Conditions

For Transistors

Part Explanation

For Transistors