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Pch -30V -12A 中功率MOSFET_RQ3E120ATRQ3E120AT是适用于开关用途的小型大功率封装的中功率MOSFET。
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| * 本产品是标准级的产品。本产品不建议使用的车载设备。 | ||||
特性：
| Grade | Standard |
| Package Code | HSMT8(3.3x3.3) |
| Package Size[mm] | 3.3x3.3(t=0.8) |
| Applications | Switching |
| Number of terminal | 8 |
| Polarity | Pch |
| Drain-Source Voltage VDSS[V] | -30 |
| Drain Current ID[A] | -39.0 |
| RDS(on)[Ω] VGS=4.5V (Typ.) | 0.0087 |
| RDS(on)[Ω] VGS=10V (Typ.) | 0.0061 |
| RDS(on)[Ω] VGS=Drive (Typ.) | 0.0087 |
| Total gate charge Qg[nC] | 33.0 |
| Power Dissipation (PD)[W] | 20.0 |
| Drive Voltage[V] | -4.5 |
| Mounting Style | Surface mount |
| Storage Temperature (Min.)[°C] | -55 |
| Storage Temperature (Max.)[°C] | 150 |
特点：
- · Low on - resistance.
· High Power Small Mold Package (HSMT8).
· Pb-free lead plating ; RoHS compliant
· Halogen Free
引脚配置图：
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技术信息
Taping Specifications
For Transistors
Condition Of Soldering
For Surface Mount Type
Storage Conditions
For Transistors
Operation Notes
About TR Die Temperature
Operation Notes
Before using ROHM Transistor
Part Explanation
For Transistors