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Nch 30V 13A 中功率MOSFET_RQ3E130BN

RQ3E130BN是大功率封装(HSMT8)的MOSFET。

* 本产品是标准级的产品。本产品不建议使用的车载设备。
型号
Status
封装
包装数量
最小独立包装数量
包装形态
RoHS
RQ3E130BNTB 供应中 HSMT8 3000 3000 Taping Yes
 
特性:
Grade Standard
Package Code HSMT8(3.3x3.3)
Package Size[mm] 3.3x3.3(t=0.8)
Number of terminal 8
Polarity Nch
Drain-Source Voltage VDSS[V] 30
Drain Current ID[A] 13.0
RDS(on)[Ω] VGS=4.5V (Typ.) 0.0067
RDS(on)[Ω] VGS=10V (Typ.) 0.0044
RDS(on)[Ω] VGS=Drive (Typ.) 0.0067
Total gate charge Qg[nC] 16.0
Power Dissipation (PD)[W] 2.0
Drive Voltage[V] 4.5
Mounting Style Surface mount
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 150
特点:
    • Low on - resistance.
    • High Power Package (HSMT8).
    • Pb-free lead plating; RoHS compliant.
    • Halogen Free
 
 
引脚配置图:
Pin Configration
 
 
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技术信息
Taping Specifications

For Transistors

Condition Of Soldering

For Surface Mount Type

Storage Conditions

For Transistors

Operation Notes

About TR Die Temperature

Operation Notes

Before using ROHM Transistor

Part Explanation

For Transistors