主页 | 晶体管 | MOSFET | 通用MOSFET | RS1E200GN
 
Downloading...
 
product-image
 

4.5V驱动型 Nch MOSFET_RS1E200GN

场效应晶体管MOSFET。通过采用微细工艺的“超低导通电阻元件”,为用户提供应用广泛的功率MOSFET。根据用途备有小型、大功率、复合化的丰富产品阵容,可满足多样的市场需求。

* 本产品是标准级的产品。本产品不建议使用的车载设备。
型号
Status
封装
包装数量
最小独立包装数量
包装形态
RoHS
RS1E200GNTB 供应中 HSOP8(Single) 2500 2500 Taping Yes
 
特性:
Grade Standard
Package Code HSOP8S(5x6)
Package Size[mm] 5.0x6.0(t=1.0)
Applications Power Supply
Number of terminal 8
Polarity Nch
Drain-Source Voltage VDSS[V] 30
Drain Current ID[A] 57.0
RDS(on)[Ω] VGS=4.5V (Typ.) 0.0047
RDS(on)[Ω] VGS=10V (Typ.) 0.0036
RDS(on)[Ω] VGS=Drive (Typ.) 0.0047
Total gate charge Qg[nC] 7.8
Power Dissipation (PD)[W] 25.0
Drive Voltage[V] 4.5
Mounting Style Surface mount
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 150
特点:
    • Low on - resistance
    • High Power Package (HSOP8)
    • Pb-free lead plating; RoHS compliant
    • Halogen Free
    • 100% Rg and UIS Tested
 
 
相关产品
相关新产品/产品更新晶体管
PART NUMBER Product Name Package Datasheet Distribution Inventory
RQ6E040XN Nch 30V 4A Small Signal MOSFET TSMT6   咨询
RS1E301GN Nch 30V 80A Power MOSFET HSOP8(Single)   咨询
RS1E321GN Nch 30V 80A Power MOSFET HSOP8(Single)   咨询
RQ6E035TN Nch 30V 3.5A Small Signal MOSFET TSMT6   咨询
RQ6E045TN Nch 30V 4.5A Small Signal MOSFET TSMT6   咨询
RQ6E045SN Nch 30V 4.5A Small Signal MOSFET TSMT6   咨询
New Products:
 
 
技术信息
Storage Conditions

For Transistors

Operation Notes

About TR Die Temperature

Operation Notes

Before using ROHM Transistor

Taping Specifications

For Transistors

Part Explanation

For Transistors