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Nch 30V 35A 中功率MOSFET_RS1E350BN

RS1E350BN是低导通电阻、小型大功率封装的MOSFET。

* 本产品是标准级的产品。本产品不建议使用的车载设备。
型号
Status
封装
包装数量
最小独立包装数量
包装形态
RoHS
RS1E350BNTB 供应中 HSOP8(Single) 2500 2500 Taping Yes
 
特性:
Grade Standard
Package Code HSOP8S(5x6)
Package Size[mm] 5.0x6.0(t=1.0)
Applications Switching, Motor
Number of terminal 8
Polarity Nch
Drain-Source Voltage VDSS[V] 30
Drain Current ID[A] 80.0
RDS(on)[Ω] VGS=4.5V (Typ.) 0.0018
RDS(on)[Ω] VGS=10V (Typ.) 0.0012
RDS(on)[Ω] VGS=Drive (Typ.) 0.0018
Total gate charge Qg[nC] 95.0
Power Dissipation (PD)[W] 35.0
Drive Voltage[V] 4.5
Mounting Style Surface mount
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 150
特点:
  • ・ Low on - resistance.
    ・ High Power small mold Package (HSOP8).
    ・ Pb-free lead plating ; RoHS compliant
    ・ Halogen Free
 
 
引脚配置图:
Pin Configration
 
 
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技术信息
Operation Notes

About TR Die Temperature

Operation Notes

Before using ROHM Transistor

Taping Specifications

For Transistors

Storage Conditions

For Transistors

Part Explanation

For Transistors