SH8J65
4V-drive type Pch+Pch Power MOSFET
SH8J65
SH8J65
4V-drive type Pch+Pch Power MOSFET
电界效果晶体管MOSFET。复合两颗Pch MOSFET。提供通过采用细微流程的「超低阻值的设备」而在广泛领域得以应用的功率MOSFET，并且结合用途，以多样的小型高功率复合型的产品线对应多种市场需求。
主要规格
特性：
Package Code
SOP8
Applications
Power Supply
Number of terminal
8
Polarity
Pch+Pch
Drain-Source Voltage VDSS[V]
-30
Drain Current ID[A]
-7
RDS(on)[Ω] VGS=4V(Typ.)
0.031
RDS(on)[Ω] VGS=4.5V(Typ.)
0.029
RDS(on)[Ω] VGS=10V(Typ.)
0.0215
RDS(on)[Ω] VGS=Drive (Typ.)
0.031
Total gate charge Qg[nC]
18
Power Dissipation (PD)[W]
2
Drive Voltage[V]
-4
Mounting Style
Surface mount
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
150
Package Size [mm]
5x6 (t=1.75)
