Downloading...
不推荐用于新产品设计

Complex Transistor(BIP+Diode)_US5L10

 
推荐产品
N/A
支援链接:
 
 
特性:
型号 US5L10TR
Status 不建议用于新设计
封装 TUMT5
包装数量 3000
最小独立包装数量 3000
包装形态 Taping
构成物质一览 inquiry
RoHS Yes
Grade Standard
Package Code SOT-353T
JEITA Package SC-113CA
Package Size[mm] 2.0x2.1(t=0.85Max.)
Number of terminal 5
Polarity NPN+Di
Collector-Emitter voltage VCEO1[V] 12.0
Collector current(continuous) IC1[A] 1.5
Collector Power dissipation PC[W] 0.4
hFE 270 to 680
hFE (Min.) 270
hFE (Max.) 680
hFE (Diode) 25
Reverse voltage VR (Diode) [V] 20.0
Forward Current IF (Diode) [A] 0.7
Forward Current Surge Peak IFSM (Diode) [A] 3.0
Mounting Style Surface mount
Equivalent (Single Part) 2SD2652 / RB461F
Storage Temperature (Min.)[°C] -40
Storage Temperature (Max.)[°C] 125
引脚配置图:
Pin Configration
 
 
技术信息
Storage Conditions

For Transistors

Condition Of Soldering

For Surface Mount Type

Operation Notes

About TR Die Temperature

Operation Notes

Before using ROHM Transistor

Taping Specifications

For Transistors

Part Explanation

For Transistors