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Complex Transistor(BIP+Diode)_US5L12

在超小型封装中内藏2个晶体管。适用于从差动增幅回路到高频水晶振动器,起动器等各种用途。

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* 本产品是标准级的产品。本产品不建议使用的车载设备。
型号
Status
封装
包装数量
最小独立包装数量
包装形态
RoHS
US5L12TR 供应中 TUMT5 3000 3000 Taping Yes
 
特性:
Grade Standard
Package Code SOT-353T
JEITA Package SC-113CA
Package Size[mm] 2.0x2.1(t=0.85Max.)
Number of terminal 5
Polarity NPN+Di
Collector-Emitter voltage VCEO1[V] 30.0
Collector current(continuous) IC1[A] 1.0
Collector Power dissipation PC[W] 0.4
hFE 270 to 680
hFE (Min.) 270
hFE (Max.) 680
hFE (Diode) 25
Reverse voltage VR (Diode) [V] 20.0
Forward Current IF (Diode) [A] 0.7
Forward Current Surge Peak IFSM (Diode) [A] 3.0
Mounting Style Surface mount
Equivalent (Single Part) 2SB1689 / RB461F
Storage Temperature (Min.)[°C] -40
Storage Temperature (Max.)[°C] 125
特点:
  • ・DC-DC转换器用小型功率复合三极管
 
 
引脚配置图:
Pin Configration
 
 
最近阅览:
相关新产品/产品更新晶体管
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技术信息
Taping Specifications

For Transistors

Condition Of Soldering

For Surface Mount Type

Storage Conditions

For Transistors

Operation Notes

About TR Die Temperature

Operation Notes

Before using ROHM Transistor

Part Explanation

For Transistors