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不推荐用于新产品设计

Complex Transistor(BIP+Diode)_US5L12

 
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特性:
型号 US5L12TR
Status 不建议用于新设计
封装 TUMT5
包装数量 3000
最小独立包装数量 3000
包装形态 Taping
构成物质一览 inquiry
RoHS Yes
Grade Standard
Package Code SOT-353T
JEITA Package SC-113CA
Package Size[mm] 2.0x2.1(t=0.85Max.)
Number of terminal 5
Polarity NPN+Di
Collector-Emitter voltage VCEO1[V] 30.0
Collector current(continuous) IC1[A] 1.0
Collector Power dissipation PC[W] 0.4
hFE 270 to 680
hFE (Min.) 270
hFE (Max.) 680
hFE (Diode) 25
Reverse voltage VR (Diode) [V] 20.0
Forward Current IF (Diode) [A] 0.7
Forward Current Surge Peak IFSM (Diode) [A] 3.0
Mounting Style Surface mount
Equivalent (Single Part) 2SB1689 / RB461F
Storage Temperature (Min.)[°C] -40
Storage Temperature (Max.)[°C] 125
引脚配置图:
Pin Configration
 
 
技术信息
Condition Of Soldering

For Surface Mount Type

Operation Notes

About TR Die Temperature

Operation Notes

Before using ROHM Transistor

Part Explanation

For Transistors