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2.5V Drive Nch+SBD MOSFET_US5U1

电界效果晶体管MOSFET。通过融合采用细微流程的低阻值MOSFET与肖特基二极管(SBD)形成了多种产品线来对应多样的市场需求。

* 本产品是标准级的产品。本产品不建议使用的车载设备。
型号
Status
封装
包装数量
最小独立包装数量
包装形态
RoHS
US5U1TR 供应中 TUMT5 3000 3000 Taping Yes
 
特性:
Grade Standard
Package Code SOT-353T
JEITA Package SC-113CA
Package Size[mm] 2.0x2.1(t=0.85Max.)
Number of terminal 5
Polarity Nch+Schottky
Drain-Source Voltage VDSS[V] 30
Drain Current ID[A] 1.5
RDS(on)[Ω] VGS=2.5V (Typ.) 0.24
RDS(on)[Ω] VGS=4V (Typ.) 0.18
RDS(on)[Ω] VGS=4.5V (Typ.) 0.17
RDS(on)[Ω] VGS=Drive (Typ.) 0.24
Total gate charge Qg[nC] 1.6
Power Dissipation (PD)[W] 0.7
Drive Voltage[V] 2.5
Reverse voltage VR (Diode) [V] 20.0
Forward Current IF (Diode) [A] 0.5
Forward Current Surge Peak IFSM (Diode) [A] 2.0
Mounting Style Surface mount
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 150
特点:
  • ・实现以2.0×2.1mm安装面积的高功率小空间的MOSFET
 
 
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New Products:
 
 
技术信息
Condition Of Soldering

For Surface Mount Type

Operation Notes

About TR Die Temperature

Operation Notes

Before using ROHM Transistor

Part Explanation

For Transistors