US6M11
1.5V Drive Nch+Pch MOSFET
US6M11
US6M11
1.5V Drive Nch+Pch MOSFET
电界效果晶体管MOSFET。复合各一颗Pch和Nch MOSFET。提供通过采用细微流程的「超低阻值的设备」而在广泛领域得以应用的功率MOSFET,并且结合用途,以多样的小型高功率复合型的产品线对应多种市场需求。
主要规格
特性:
Package Code
SOT-363T
JEITA Package
SC-113DA
Number of terminal
6
Polarity
Nch+Pch
Drain-Source Voltage VDSS[V]
20
Drain Current ID[A]
1.5
RDS(on)[Ω] VGS=1.5V(Typ.)
0.3
RDS(on)[Ω] VGS=2.5V(Typ.)
0.17
RDS(on)[Ω] VGS=Drive (Typ.)
0.3
Total gate charge Qg[nC]
1.8
Power Dissipation (PD)[W]
1
Drive Voltage[V]
1.5
Mounting Style
Surface mount
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
150
Package Size [mm]
2x2.1 (t=0.85)