Trench MOS Structure, 100V, 30A, TO-263AB, Highly Efficient SBD_RBLQ30NB10S (开发中)

The RBLQ30NB10S is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high temperatures. Ideal for switching power supplies, freewheel diodes, and reverse polarity protection applications.

* 本产品是标准级的产品。本产品不建议使用于车载设备。
型号 | RBLQ30NB10STL
Status | 开发中
封装 | LPDL
包装数量 | 1000
最小独立包装数量 | 1000
包装形态 | Taping
RoHS | Yes

特性:

Grade

Standard

Configuration

Single

Package Code

TO-263AB

Package Size[mm]

15.1x10.1(t=4.7)

Mounting Style

Leaded type

Number of terminal

3

VRM[V]

100

Reverse Voltage VR[V]

100

Average Rectified Forward Current IO[A]

30.0

IFSM[A]

200.0

Forward Voltage VF(Max.)[V]

0.86

IF @ Forward Voltage [A]

30.0

Reverse Current IR(Max.)[mA]

0.15

VR @ Reverse Current[V]

100

Storage Temperature (Min.)[°C]

-55

Storage Temperature (Max.)[°C]

150

特点:

  • High reliability
  • Power mold type
  • Low VF and low IR