RCJ081N20
10V驱动型 Nch 功率MOSFET
RCJ081N20
10V驱动型 Nch 功率MOSFET
电界効果晶体管的MOSFET。提供通过采用细微流程的「超低阻值的设备」而在广泛领域得以应用的功率MOSFET，并且结合用途，以多样的小型高功率复合型的产品线对应多种市场需求。
主要规格
特性：
Package Code
TO-263 (D2PAK)
JEITA Package
SC-83
Number of terminal
3
Polarity
Nch
Drain-Source Voltage VDSS[V]
200
Drain Current ID[A]
8
RDS(on)[Ω] VGS=10V(Typ)
0.55
RDS(on)[Ω] VGS=Drive (Typ)
0.55
Total gate charge Qg[nC]
8.5
Power Dissipation (PD)[W]
40
Drive Voltage[V]
10
Mounting Style
Surface mount
Storage Temperature (Min)[℃]
-55
Storage Temperature (Max)[℃]
150
Package Size [mm]
13.1x10.1 (t=4.7)
特点：
・ Low on-resistance.・ Fast switching speed.
・ Drive circuits can be simple.
・ Parallel use is easy.
・ Pb-free lead plating ; RoHS compliant
・ 100% Avalanche tested
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