BM1R00147F
高效率、低待机功耗、支持连续模式 二次侧同步整流控制IC

BM1R00147F是用于二次测输出段的同步整流控制器。内置超低功耗的高精度分流稳压器,可大幅度减少待机时的功耗。分流稳压器由完全独立芯片构成,因此即使在High Side使用时,也可作为GND基准工作。此外,连续模式工作时,可以不输入一次侧开关同步信号进行动作,有助于进一步节省空间。工作电源电压范围广,为2.7V~32V,可应对各种输出的应用。采用高耐压120V处理器,可直接监视漏极电压。

Data Sheet 购买 *
* 本产品是标准级的产品。
本产品不建议使用于车载设备。

主要规格

 
型号 | BM1R00147F-E2
Status | 开发中
封装 | SOP8
包装数量 | 2500
最小独立包装数量 | 2500
包装形态 | Taping
RoHS | Yes

特性:

FET

-

Controller Type

SR

Vin1(Min.)[V]

2.7

Vin1(Max.)[V]

32.0

Channel

1

Light Load mode

No

EN

No

Operating Temperature (Min.)[°C]

-40

Operating Temperature (Max.)[°C]

105

特点:

  • Built-in Ultra-Low Consumption Shunt Regulator Reducing Standby Power Consumption
  • Synchronous Rectification FET Supports High and Low Side
  • 120V High Voltage Process DRAIN terminal
  • Wide Input Operating Voltage Range of 2.7V to 32V
  • Supports LLC and PWM QR Controller
  • No Input Required on the Primary-Side at CCM
  • Built-in Overvoltage Protection for SH_IN and SH_OUT Terminal
  • Built-in Thermal Shutdown Function
  • Built-in Auto Shutdown Function
  • SOP8 package

Evaluation
Board

 
    • Evaluation Board
    • BM1R00147F-EVK-001
    • This evaluation board has provided the secondary-side synchronous rectification circuit using BM1R00147F. This evaluation board assumes that the primary side controller of insulated type with PWM flyback converter operates in DCM and set to 5V for output voltage. The secondary-side MOSFET uses ROHM’s RX1L16BGN. The secondary-side MOSFET can be located on High Side. (When the secondary-side MOSFET is located on Low Side, see “User’s Guide BM1R00147F-EVK-002 (No.60UG023E)”.)

  • User's Guide Purchase Inquiry
    • Evaluation Board
    • BM1R00147F-EVK-002
    • This evaluation board has provided the secondary-side synchronous rectification circuit using BM1R00147F. This evaluation board assumes that the primary side controller of insulated type with PWM flyback converter operates in DCM and set to 5V for output voltage. The secondary-side MOSFET uses ROHM’s RX1L16BGN. The secondary-side MOSFET can be located on Low Side. (When the secondary-side MOSFET is located on High Side, see “User’s Guide BM1R00147F-EVK-001 (No.60UG021E)”.)

  • User's Guide Purchase Inquiry

设计资源

 

文档

User's Guide

  • BM1R00147F Evaluation Board (High Side Type) User's Guide
  • BM1R00147F Evaluation Board (Low Side Type) User's Guide

Application Note

  • BM1R001xxF series Technical Design

技术记事

Schematic Design & Verification

  • 功率测量中探针校正的重要性 倾斜校正篇
  • 旁路电容器的阻抗特性

Thermal Design

  • 热阻、热特性参数

设计模型

2D/3D/CAD

  • SOP8 Footprint / Symbol
  • SOP8 3D STEP Data

封装和质量数据

Package Information

  • Package Information
  • Anti-Whisker formation

Manufacturing Data

  • Factory Information

Environmental Data

  • UL94 Flame Classifications of Mold Compound
  • Compliance with the ELV directive
  • REACH SVHC Non-use Declaration
  • RoHS Comission Delegated Directive

Export Information

  • The Export Control Order
  • Export Administration Regulations(EAR)