BM1R00147F
高效率、低待机功耗、支持连续模式 二次侧同步整流控制IC
BM1R00147F
高效率、低待机功耗、支持连续模式 二次侧同步整流控制IC
BM1R00147F是用于二次测输出段的同步整流控制器。内置超低功耗的高精度分流稳压器，可大幅度减少待机时的功耗。分流稳压器由完全独立芯片构成，因此即使在High Side使用时，也可作为GND基准工作。此外，连续模式工作时，可以不输入一次侧开关同步信号进行动作，有助于进一步节省空间。工作电源电压范围广，为2.7V～32V，可应对各种输出的应用。采用高耐压120V处理器，可直接监视漏极电压。
主要规格
特性：
Channel
1
Controller Type
SR
Circuit Configuration
Flyback
Vin1 (Min.)[V]
2.7
Vin1 (Max.)[V]
32
Shunt Regulator Accuracy (%)
0.5
VCC OVP
Auto Restart
OVP
Fixed
Compulsion OFF Time (typ. μs)
2
FET
-
Drain Monitor Voltage [V]
120
BR PIN
No
Light Load mode
No
EN
No
Operating Temperature (Min.)[°C]
-40
Operating Temperature (Max.)[°C]
105
Package Size [mm]
5x6.2 (t=1.71)
特点：
- Built-in Ultra-Low Consumption Shunt Regulator Reducing Standby Power Consumption
- Synchronous Rectification FET Supports High and Low Side
- 120V High Voltage Process DRAIN terminal
- Wide Input Operating Voltage Range of 2.7V to 32V
- Supports LLC and PWM QR Controller
- No Input Required on the Primary-Side at CCM
- Built-in Overvoltage Protection for SH_IN and SH_OUT Terminal
- Built-in Thermal Shutdown Function
- Built-in Auto Shutdown Function
- SOP8 package
Reference Design / Application Evaluation Kit
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- Evaluation Board - BM1R00147F-EVK-001
This evaluation board has provided the secondary-side synchronous rectification circuit using BM1R00147F. This evaluation board assumes that the primary side controller of insulated type with PWM flyback converter operates in DCM and set to 5V for output voltage. The secondary-side MOSFET uses ROHM’s RX1L16BGN. The secondary-side MOSFET can be located on High Side. (When the secondary-side MOSFET is located on Low Side, see “User’s Guide BM1R00147F-EVK-002 (No.60UG023E)”.)
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- Evaluation Board - BM1R00147F-EVK-002
This evaluation board has provided the secondary-side synchronous rectification circuit using BM1R00147F. This evaluation board assumes that the primary side controller of insulated type with PWM flyback converter operates in DCM and set to 5V for output voltage. The secondary-side MOSFET uses ROHM’s RX1L16BGN. The secondary-side MOSFET can be located on Low Side. (When the secondary-side MOSFET is located on High Side, see “User’s Guide BM1R00147F-EVK-001 (No.60UG021E)”.)
