LTR100JZPJL
High Power Chip Resistors
LTR100JZPJL
LTR100JZPJL
High Power Chip Resistors
罗姆的高功率贴片电阻根据长边被设定为电极，比通用的贴片电阻大幅度提高了额定功率。并且电极间距的缩短，实现了优越的接合可靠性。
Lineup
* Fractions not supported (decimals only)
主要规格
特性：
Automotive grade
Yes
Size[mm](inch)
3264(1225)
Rated Power[W]
3
Resistance Tolerance
J (±5%)
Resistance range[Ω]
0.1 to 0.91
Resistance(Min.)[Ω]
0.1
Resistance(Max.)[Ω]
0.91
Temperature Coefficient[ppm/°C]
±200
Operating Temperature[°C]
-55 to 155
Type
For current sensing (Wide terminal)
Operating Temperature (Max.)[°C]
155
Common Standard
AEC-Q200 (Automotive Grade)
特点：
- Chip Resistors for current detection: 10mΩ~
- High joint reliability with long side terminations.
- Improvement of rated power enables to displace smaller size of resistors, and it contributes space savings in your set.
- ROHM resistors have obtained ISO9001 / TS16949 certification.
- Corresponds to AEC-Q200.
Reference Design / Application Evaluation Kit
-
- Reference Design - REFLD002
- 适用于LiDAR的大功率激光二极管高速驱动EcoGaN™和高速栅极驱动器参考设计
LiDAR传感器不仅适用于车辆的自动驾驶应用，还适用于工业和基础设施领域的众多应用。LiDAR传感器需要具备更远的感测距离和高分辨率，不仅要提高激光二极管的特性，还需要以更快的速度和更高的功率驱动激光二极管。ROHM拥有905nm脉冲的高功率窄线宽激光二极管产品群（RLD90QZWx系列）。另外，ROHM还提供包括可高速驱动的下一代GaN器件“EcoGaN™”和用于GaN HEMT的高速栅极驱动器在内的参考设计，这将非常有助于提高LiDAR传感器的特性（距离、分辨率）。
- Enables high-speed driving of laser diodes - a key device in LiDAR applications
- Includes next-gen EcoGaN™ devices
- Built-in high-speed gate driver for GaN HEMTs (BD2311NVX-C)
- Two circuit types: square wave and resonant
