N-channel SiC（碳化硅）功率MOSFET_SCT2080KEHR (新产品)
基于SiC的平面型MOSFET。 其特征是高耐压、低导通电阻、高速开关。
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特性：
Common Standard
AEC-Q101 (Automotive Grade)
Drain-source Voltage[V]
1200
Drain-source On-state Resistance(Typ.)[mΩ]
80.0
Drain Current[A]
40.0
Total Power Dissipation[W]
262
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
特点：
- Low on-resistance
- Fast switching speed
- Fast reverse recovery
- Easy to parallel
- Simple to drive
- Pb-free lead plating ; RoHS compliant
- Qualified to AEC-Q101