N-channel SiC(碳化硅)功率MOSFET_SCT3030ALHR (新产品)

沟槽栅极结构的SiC-MOSFET。平面型SiC-MOSFET相比,同一芯片尺寸的导通电阻可降低50%,这将大幅降低太阳能发电用功率调节器和工业设备用电源、工业用逆变器等所有相关设备的功率损耗。

型号 | SCT3030ALHRC11
Status | 供应中
封装 | TO-247N
包装数量 | 450
最小独立包装数量 | 30
包装形态 | Tube
RoHS | Yes

特性:

Common Standard

AEC-Q101 (Automotive Grade)

Drain-source Voltage[V]

650

Drain-source On-state Resistance(Typ.)[mΩ]

30.0

Drain Current[A]

70.0

Total Power Dissipation[W]

262

Junction Temperature(Max.)[°C]

175

Storage Temperature (Min.)[°C]

-55

Storage Temperature (Max.)[°C]

175

特点:

  • Low on-resistance
  • Fast switching speed
  • Fast reverse recovery
  • Easy to parallel
  • Simple to drive
  • Pb-free lead plating ; RoHS compliant
  • Qualified to AEC-Q101