SCT3040KR
1200V Nch 4引脚封装 SiC(碳化硅)MOSFET

SCT3040KR是非常适用于要求高效率的服务器用电源、太阳能逆变器及电动汽车充电站等的沟槽栅结构SiC MOSFET。采用电源源极引脚和驱动器源极引脚分离的4引脚封装,能够充分地发挥出高速开关性能。尤其是可以显著改善导通损耗。与以往的3引脚封装(TO-247N)相比,导通损耗和关断损耗合起来预计可降低约35%的损耗。

Data Sheet 购买 *
* 本产品是标准级的产品。
本产品不建议使用于车载设备。

主要规格

 
型号 | SCT3040KRC14
Status | 推荐品
封装 | TO-247-4L
包装数量 | 240
最小独立包装数量 | 30
包装形态 | Tube
RoHS | Yes

特性:

Drain-source Voltage[V]

1200

Drain-source On-state Resistance(Typ.)[mΩ]

40.0

Drain Current[A]

55.0

Total Power Dissipation[W]

262

Junction Temperature(Max.)[°C]

175

Storage Temperature (Min.)[°C]

-55

Storage Temperature (Max.)[°C]

175

特点:

  • Low on-resistance
  • Fast switching speed
  • Fast reverse recovery
  • Easy to parallel
  • Simple to drive
  • Pb-free lead plating; RoHS compliant
  • High efficiency 4pin package
  • Evaluation board 'P02SCT3040KR-EVK-001'

Evaluation
Board

 
    • Evaluation Board
    • P02SCT3040KR-EVK-001
      • For evaluating ROHM’s SCT3040KR (1200V/40mΩ/TO-247-4L)
        Enables evaluation of other ROHM SiC MOSFETs by simply changing the circuit multiplier
      • In addition to the TO-247-4L package, there are through-holes for TO-247-3L that make it possible to perform comparative evaluations on the same board
      • Single power supply (+12V operation)
      • Supports double pulse testing up to 150A and switching up to 500kHz
      • Compatible with a variety of power supply topologies (Buck/Boost/Half Bridge)
      • Built-in isolated power supply for gate drive adjustable via variable resistor (+12V to +23V)
      • Jumper pins enable switching between negative bias/zero bias for gate drive
      • Includes overcurrent protection (DESAT, OCP) along with a function for preventing simultaneous ON of both upper and lower arms

  • User's Guide Buy

设计资源

 

文档

White Paper

  • Cutting-Edge Web Simulation Tool “ROHM Solution Simulator” Capable of Complete Circuit Verification of Power Devices and Driver ICs
  • LEADRIVE: Design, Test and System Evaluation of Silicon Carbide Power Modules and Motor Control Units
  • Solving the challenges of driving SiC MOSFETs with new packaging developments

User's Guide

  • TO-247-4L 半桥评估板 使用说明书
  • TO-247-4L 半桥评估板 产品规格书

Application Note

  • Improvement of switching loss by driver source

技术记事

Schematic Design & Verification

  • [NEW]SiC功率器件・模块 应用笔记
  • 根据测定波形计算功率损耗
  • 开关电路的功率损失计算
  • 栅源电压测定时的注意点
  • 开关波形的监测方法
  • 桥式电路相关的Gate-Source 电圧的动作
  • 栅极-源极电压的浪涌抑制方法
  • 通过驱动源极端子改善开关损耗
  • 缓冲电路的设计方法
  • 功率测量中探针校正的重要性 倾斜校正篇
  • 旁路电容器的阻抗特性

Thermal Design

  • 何谓热设计
  • 使用瞬态热阻抗计算结温的方法
  • Notes for Temperature Measurement Using Thermocouples
  • 热仿真用双热阻模型
  • 热模型是什么(SiC功率器件篇)
  • Notes for Temperature Measurement Using Forward Voltage of PN Junction
  • 热模型使用方法(SiC功率器件篇)
  • 热阻RthJC 的测量方法和使用方法
  • 使用热电偶测量封装背面温度时的注意点

设计模型

Models

  • SCT3040KR PLECS Model
  • SCT3040KR SPICE Simulation Evaluation Circuit
  • SCT3040KR SPICE Model
  • SCT3040KR Thermal Model (lib)
  • How to Create Symbols for PSpice Models

封装和质量数据

Package Information

  • TO-247-4L Dimensions
  • TO-247-4L Inner Structure
  • TO-247-4L Taping Information
  • Moisture Sensitivity Level
  • Anti-Whisker formation

Environmental Data

  • About Flammability of Materials
  • Compliance of the ELV directive
  • Report of SVHC under REACH Regulation

Export Information

  • About Export Administration Regulations (EAR)