BSM180C12P2E202
SiC（碳化硅）功率模块

BSM180C12P2E202由罗姆公司生产的SiC-DMOSFET和SiC-SBD构成，是2in1的SiC功率模块。

Data Sheet 购买 *
* 本产品是标准级的产品。
本产品不建议使用于车载设备。
Data Sheet 购买 *

主要规格

 
型号 | BSM180C12P2E202
Status | 推荐品
封装 | E
包装数量 | 4
最小独立包装数量 | 4
包装形态 | Corrugated Cardboard
RoHS | Yes

特性：

Drain-source Voltage[V]

1200

Drain Current[A]

204

Total Power Dissipation[W]

1360

Junction Temperature(Max.)[°C]

175

Storage Temperature (Min.)[°C]

-40

Storage Temperature (Max.)[°C]

125

Package

Chopper

Package Size [mm]

152x57.95 (t=18)

Find Similar

特点：

  • Low surge, low switching loss.
  • High-speed switching possible.
  • Reduced temperature dependance.

Reference Design / Application Evaluation Kit

 
    • Drive Board - BSMGD2G12D24-EVK001

    • This evaluation board, BSMGD2G12D24-EVK001, is a gate driver board for full SiC Modules with the 2nd Generation SiC-MOSFET in G and E type housing. This evaluation board contains all the necessary components for optimal and safety driving the SiC module

    • User Guide
    • Snubber Module - MGSM1D72J2-145MH16

    • Snubber Module for BSM series (1200V, E / G type)

X

Most Viewed