BSM180C12P2E202
SiC(碳化硅)功率模块

BSM180C12P2E202由罗姆公司生产的SiC-DMOSFET和SiC-SBD构成,是2in1的SiC功率模块。

Data Sheet 购买 *
* 本产品是标准级的产品。
本产品不建议使用于车载设备。

主要规格

 
型号 | BSM180C12P2E202
Status | 推荐品
封装 | E
包装数量 | 4
最小独立包装数量 | 4
包装形态 | Corrugated Cardboard
RoHS | Yes

特性:

Drain-source Voltage[V]

1200

Drain Current[A]

204

Total Power Dissipation[W]

1360

Junction Temperature(Max.)[°C]

175

Storage Temperature (Min.)[°C]

-40

Storage Temperature (Max.)[°C]

125

Package

Chopper

Package Size [mm]

152x57.95 (t=18)

Find Similar

特点:

  • Low surge, low switching loss.
  • High-speed switching possible.
  • Reduced temperature dependance.

Evaluation
Board

 
    • Drive Board
    • AgileSwitch 2ASC-12A1HP / EDCA1
    • For BSM series (1200V, E / G type)
      Core Driver : 2ASC-12A1HP
      Adapter Board : EDCA1

    • Drive Board
    • BSMGD2G12D24-EVK001
    • This evaluation board, BSMGD2G12D24-EVK001, is a gate driver board for full SiC Modules with the 2nd Generation SiC-MOSFET in G and E type housing. This evaluation board contains all the necessary components for optimal and safety driving the SiC module

  • User's Guide Purchase Inquiry
    • Snubber Module
    • MGSM1D72J2-145MH16
    • BSM series (1200V, E / G type)

  • Purchase Inquiry
    • Drive Board
    • TAMURA 2DU series
    • For BSM series (1200V, C / E / G type)