BSM600D12P3G001
SiC（碳化硅）功率模块

BSM600D12P3G001是由罗姆公司生产的SiC-UMOSFET和SiC-SBD构成的全SiC半桥模块。适合电机驱动、逆变器、转换器、太阳能发电、风力发电及感应加热装置等用途。

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* 本产品是标准级的产品。
本产品不建议使用于车载设备。
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主要规格

 
型号 | BSM600D12P3G001
Status | 推荐品
封装 | G
包装数量 | 4
最小独立包装数量 | 4
包装形态 | Corrugated Cardboard
RoHS | Yes

特性：

Drain-source Voltage[V]

1200

Drain Current[A]

576

Total Power Dissipation[W]

2450

Junction Temperature(Max.)[°C]

175

Storage Temperature (Min.)[°C]

-40

Storage Temperature (Max.)[°C]

125

Package

Half bridge

Package Size [mm]

152x62 (t=18)

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特点：

  • Low surge, low switching loss.
  • High-speed switching possible.
  • Reduced temperature dependance.

Reference Design / Application Evaluation Kit

 
    • Drive Board - BSMGD3G12D24-EVK001

    • This evaluation board, BSMGD3G12D24-EVK001, is a gate driver board for full SiC Modules with the 3rd / 4th Generation SiC-MOSFET in G and E type housing. This evaluation board contains all the necessary components for optimal and safety driving the SiC module.

    • User Guide
    • Snubber Module - MGSM1D72J2-145MH16

    • Snubber Module for BSM series (1200V, E / G type)

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