QS6J1
2.5V Drive Pch+Pch MOSFET
QS6J1
QS6J1
2.5V Drive Pch+Pch MOSFET
电界效果晶体管MOSFET。复合两颗Pch MOSFET。提供通过采用细微流程的「超低阻值的设备」而在广泛领域得以应用的功率MOSFET，并且结合用途，以多样的小型高功率复合型的产品线对应多种市场需求。
主要规格
特性：
Package Code
SOT-457T
JEITA Package
SC-95
Number of terminal
6
Polarity
Pch+Pch
Drain-Source Voltage VDSS[V]
-20
Drain Current ID[A]
-1.5
RDS(on)[Ω] VGS=2.5V(Typ.)
0.31
RDS(on)[Ω] VGS=4V(Typ.)
0.17
RDS(on)[Ω] VGS=4.5V(Typ.)
0.155
RDS(on)[Ω] VGS=Drive (Typ.)
0.31
Total gate charge Qg[nC]
3
Power Dissipation (PD)[W]
1.25
Drive Voltage[V]
-2.5
Mounting Style
Surface mount
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
150
Package Size [mm]
2.9x2.8 (t=1)
特点：
- Low on - resistance.
- Built-in G-S Protection Diode.
- Small Surface Mount Package(TSMT6).
- Pb-free lead plating; RoHS compliant.
