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Nch 30V 13A 中功率MOSFET_RQ3E130BN

RQ3E130BN是大功率封装(HSMT8)的MOSFET。

* 本产品是标准级的产品。本产品不建议使用的车载设备。
型号 | RQ3E130BNTB
Status | 供应中
封装 | HSMT8
包装数量 | 3000
最小独立包装数量 | 3000
包装形态 | Taping
RoHS | Yes

特性:

Grade

Standard

Package Code

HSMT8(3.3x3.3)

Package Size[mm]

3.3x3.3(t=0.8)

Applications

Switching, Motor

Number of terminal

8

Polarity

Nch

Drain-Source Voltage VDSS[V]

30

Drain Current ID[A]

39.0

RDS(on)[Ω] VGS=4.5V (Typ.)

0.0067

RDS(on)[Ω] VGS=10V (Typ.)

0.0044

RDS(on)[Ω] VGS=Drive (Typ.)

0.0067

Total gate charge Qg[nC]

16.0

Power Dissipation (PD)[W]

16.0

Drive Voltage[V]

4.5

Mounting Style

Surface mount

Storage Temperature (Min.)[°C]

-55

Storage Temperature (Max.)[°C]

150

特点:

  • Low on - resistance.
  • High Power Package (HSMT8).
  • Pb-free lead plating; RoHS compliant.
  • Halogen Free