新闻/专题一览
- 2023.01.10
- 论文/学会发表更新 (电力电子 : 学会发表 1件, AI : 学会发表 1件)
- 电力电子
学会发表
- 2023/05
Autonomous Minimization of Power Loss by Switching Frequency Adjusting Function for a DC–DC Converter
- AI
学会发表
- 2022/12
Principal Component Analysis based GaN transistor live health monitoring
- 2022.12.27
- 核心技术更新 (传感器技术 : 1件)
- 2022.12.12
- 论文/学会发表更新 (电力电子 : 学会发表 2件)
- 电力电子
学会发表
- 2022/12
A Secondary-Side Resonant LLC converter for Reducing Resonance Voltage with Boost Mode Operation Using Resonance Including Current Doubler Rectifier - 2022/12
Research on the correlation between power devices and power systems
- 2022.11.09
- 论文/学会发表更新 (电力电子 : 学会发表 3件)
- 电力电子
学会发表
- 2022/11
Nine Point Bending Test Technique for Evaluating the Sintered Silver Die Degradation - 2022/12
Sintered Silver Degradation Assessment by Thermal and Mechanical Cyclic Tests - 2023/01
SiC wafer cost reduction with remote epitaxy technology
- 2022.09.08
- 论文/学会发表更新 (电力电子 : 学会发表 4件, 传感器技术 : 学会发表 2件)
- 电力电子
学会发表
- Sintered Silver Die Degradation Evaluation by Nine Point Bending Test Technique
- Control of current distribution for enhanced robustness of single-mode oscillation in a photonic-crystal surface-emitting laser
- Evaluating Sintered Silver Die-attach Thermal Cycling Degradation
- Degradation Mechanism Comparison of Sintered Silver Die in Thermal and Mechanical Cycling Tests
- 传感器技术
学会发表
- THz imaging system with a single resonant tunneling diode transceiver in the 300-GHz band
- Size Reduction in Imaging System Using a Single Resonant Tunneling Diode Transceiver
- 2022.08.26
- 论文/学会发表更新 (电力电子 : 论文 2件/学会发表 7件, 传感器技术 : 学会发表 2件)
- 电力电子
论文
- Evaluation of Thermal Couple Impedance Model of Power Modules for Accurate Die Temperature Estimation up to 200℃
- An evaluation of a new type of High Efficiency Hybrid Gate Drive Circuit for SiC- MOSFET suitable for Automotive Power Electronics System Applications
学会发表
- 自動車用パワーエレクトロニクスの現状と動向
- Auto Structural Optimization of Toroidal Coils Based on Neural Network and Genetic Algorithm
- LPCVD SiN Film Breakdown and N2-anneal Temperature (Ⅰ) TDDB and ESR Evaluations
- LPCVD SiN Film Breakdown and N2-anneal Temperature (Ⅱ) ESR and FTIR Evaluations
- Effect of N2-Anneal Temperature on Silicon Nitride film:(Ⅰ) Time-Dependent Dielectric Breakdown and ESR Evaluations
- Effect of N2-Anneal Temperature on Silicon Nitride film:(Ⅱ) Fine Structures of ESR Spectrum and FTIR
- Effects of Underside-Si Annealing on Charge Breakdown of LPCVD SiN Film
- 传感器技术
学会发表
- Oxygen and humidity sensing property of a limiting current-type thin-film YSZ-based sensor on a micro-hotplate
- Compact and cost-effective solution for terahertz applications
- 2022.08.03
- ROHM研发中心主任晋升为IEEE高级会员