Reference Design - china

• Spice Simulation Evaluation Circuit is available. Download Circuit Data
• Input: Vin=400V
• Output: Po=10kW
  Vph_ph=320Vpk (Vin*MR)
  Im=25.5A (Po/Vin/MR/√1.5)
• PWM: fsw=20kHz (3-Phase Modulation)
  rpm=3000
  MR=0.8 (Vph_ph(pk)/Vin)
  td1=100ns
  td2=100ns
• Gate Drive: Vd=10V Vs=-2V
  R source1=5Ω
  R sink1=2Ω
  R source2=5Ω
  R sink2=2Ω
• Q1,2,3,4,5,6: R6047MNZ1 (600V 47A)
  Si MOSFET
  Fast Reverse Recovery
• L1,2,3: 1mH
• R1,2,3: {Po/Im/Im/3}
• R4: {(Im-1)*10k}
• R5: 10kΩ
• Tj=100℃

• R6047MNZ1

• Spice Simulation Evaluation Circuit is available. Download Circuit Data
• Input: Vin=400V
• Output: Po=10kW
  Vph_ph=320Vpk (Vin*MR)
  Im=25.5A (Po/Vin/MR/√1.5)
• PWM: fsw=20kHz (2-Phase Modulation)
  rpm=3000
  MR=0.8 (Vph_ph(pk)/Vin)
  td1=100ns
  td2=100ns
• Gate Drive: Vd=10V Vs=-2V
  R source1=5Ω
  R sink1=2Ω
  R source2=5Ω
  R sink2=2Ω
• Q1,2,3,4,5,6: R6047MNZ1 (600V 47A)
  Si MOSFET
  Fast Reverse Recovery
• L1,2,3: 1mH
• R1,2,3: {Po/Im/Im/3}
• R4: {(Im-1)*10k}
• R5: 10kΩ
• Tj=100℃

• R6047MNZ1

• Spice Simulation Evaluation Circuit is available. Download Circuit Data
• Input: Vin=400V
• Output: Vo=12V Io=100A
• PWM: fsw=200kHz
• Gate Drive: Vd=10V/Vs=-2V
  td1=100ns
  td2=100ns
  Rg source1=5Ω
  Rg sink1=2Ω
  Rg source2=5Ω
  Rg sink2=2Ω
• Q1,2,3,4: R6011ENX
  Si MOSFET (600V 11A)
• D1,2,3,4,5,6: RB238T100
  Si SBD (100V 20A+20A)
• TX1: 500uH : 0.8uH+0.8uH K=1
• L1: 5uH
• L2: 5uH
• Tj: 100℃

• R6011ENX

• Spice Simulation Evaluation Circuit is available. Download Circuit Data
• Input: Vin=400V
• Output: Vo=12V Io=100A
• PFM: fsw=50kHz~100kHz
• Gate Drive: Vd=10V/Vs=-2V
  td1=100ns
  td2=100ns
  Rg source1=5Ω
  Rg sink1=2Ω
  Rg source2=5Ω
  Rg sink2=2Ω
• Q1,2: R6020ENX
  Si MOSFET (600V 20A)
• D1,2,3,4: RB238T-40
  Si SBD (40V 20A+20A)
• TX1: 500uH : 5uH+5uH K=1
• L1: 100uH
• C1: 100nF
• Tj: 100℃

• R6020ENX

• Spice Simulation Evaluation Circuit is available. Download Circuit Data
• Input: Vin=400V
• Output: Vo=12V Io=100A
• PWM: fsw=200kHz
• Gate Drive: Vd=10V/Vs=-2V
  td1=100ns
  td2=100ns
  Rg source1=5Ω
  Rg sink1=2Ω
  Rg source2=5Ω
  Rg sink2=2Ω
• Q1,2,3,4: R6011ENX
  Si MOSFET (600V 11A)
• D1,2,3,4,5,6: RB238T100
  Si SBD (100V 20A+20A)
• TX1: 500uH : 0.8uH+0.8uH K=1
• L1: 5uH
• L2: 5uH
• Tj: 100℃

• RB238T100