Models
- RCJ100N25 SPICE Model
- RCJ100N25 Thermal Model (lib)
Characteristics Data
- ESD Data
RCJ100N25
RCJ100N25
10V Drive Nch MOSFET
电界効果晶体管的MOSFET。提供通过采用细微流程的「超低阻值的设备」而在广泛领域得以应用的功率MOSFET，并且结合用途，以多样的小型高功率复合型的产品线对应多种市场需求。
主要规格
特性：
Grade
Standard
Package Code
TO-263 (D2PAK)
JEITA Package
SC-83
Package Size[mm]
10.1x13.1 (t=4.5)
Number of terminal
3
Polarity
Nch
Drain-Source Voltage VDSS[V]
250
Drain Current ID[A]
10.0
RDS(on)[Ω] VGS=10V(Typ.)
0.245
RDS(on)[Ω] VGS=Drive (Typ.)
0.245
Total gate charge Qg[nC]
26.5
Power Dissipation (PD)[W]
40.0
Drive Voltage[V]
10.0
Mounting Style
Surface mount
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
150
特点：
・10V驱动型 Nch 功率MOSFET设计资源
技术记事
Schematic Design & Verification
- Temperature derating method for Safe Operating Area (SOA)
- 开关电路的功率损失计算
- 开关波形的监测方法
- 功率测量中探针校正的重要性 倾斜校正篇
- 旁路电容器的阻抗特性
Thermal Design
- Notes for Temperature Measurement Using Thermocouples
- 热仿真用双热阻模型
- What is a Thermal Model? (Transistor)
- Notes for Temperature Measurement Using Forward Voltage of PN Junction
- 热阻RthJC 的测量方法和使用方法
- 使用热电偶测量封装背面温度时的注意点
设计模型
Models
- RCJ100N25 SPICE Model
- RCJ100N25 Thermal Model (lib)
Characteristics Data
- ESD Data
封装和质量数据
Package Information
- Package Dimensions
- Inner Structure
- Taping Information
- Explanation for Marking
- Condition of Soldering
- Moisture Sensitivity Level
- Anti-Whisker formation
Manufacturing Data
- Reliability Test Result
Environmental Data
- Constitution Materials List - Please contact us by filling in the form.
- About Flammability of Materials
- About Non-use SVHC under Reach Regulation : Please contact us by filling in the form.
- Compliance of the RoHS / ELV directive
Export Information
- About Export Regulations