R6507KNX
高速开关规格 Nch 650V 7A 功率MOSFET

R6xxxKNx系列是重视高效性,以高速开关性能为特点的Super Junction MOSFET产品。该系列产品可在追求高速开关的应用中实现高性能。高速开关性能有助于实现PFC和LLC等电路的高效率化。

Data Sheet 购买 *
* 本产品是标准级的产品。
本产品不建议使用于车载设备。

主要规格

 
型号 | R6507KNXC7G
Status | 推荐品
封装 | TO-220FM
包装数量 | 1000
最小独立包装数量 | 50
包装形态 | Tube
RoHS | Yes

特性:

Grade

Standard

Package Code

TO-220FM

Package Size[mm]

15.1x10.1 (t=4.6)

Applications

Power Supply

Number of terminal

3

Polarity

Nch

Drain-Source Voltage VDSS[V]

650

Drain Current ID[A]

7.0

RDS(on)[Ω] VGS=10V(Typ.)

0.605

RDS(on)[Ω] VGS=Drive (Typ.)

0.605

Total gate charge Qg[nC]

14.5

Power Dissipation (PD)[W]

46.0

Drive Voltage[V]

10.0

Trr (Typ.)[ns]

320

Mounting Style

Leaded type

Bare Die Part Number

Available: K8060

Storage Temperature (Min.)[°C]

-55

Storage Temperature (Max.)[°C]

150

特点:

  • Low on-resistance
  • Ultra fast switching speed
  • Parallel use is easy
  • Pb-free plating ; RoHS compliant

设计资源

 

技术记事

Schematic Design & Verification

  • Temperature derating method for Safe Operating Area (SOA)
  • 开关电路的功率损失计算
  • 开关波形的监测方法
  • 功率测量中探针校正的重要性 倾斜校正篇
  • 旁路电容器的阻抗特性

Thermal Design

  • 使用瞬态热阻抗计算结温的方法
  • Notes for Temperature Measurement Using Thermocouples
  • 热仿真用双热阻模型
  • What is a Thermal Model? (Transistor)
  • Notes for Temperature Measurement Using Forward Voltage of PN Junction
  • 热阻RthJC 的测量方法和使用方法
  • 使用热电偶测量封装背面温度时的注意点

封装和质量数据

Package Information

  • Package Dimensions
  • Explanation for Marking
  • Moisture Sensitivity Level
  • Anti-Whisker formation

Environmental Data

  • About Flammability of Materials
  • About Non-use SVHC under Reach Regulation : Please contact us by filling in the form.
  • Compliance of the RoHS / ELV directive

Export Information

  • About Export Regulations