R6020JNJ
Nch 600V 20A 功率MOSFET

R6020JNJ is a power MOSFET for switching applications.

Data Sheet 购买 *
* 本产品是标准级的产品。
本产品不建议使用于车载设备。

主要规格

 
型号 | R6020JNJGTL
Status | 推荐品
封装 | LPTS (D2PAK)
包装数量 | 1000
最小独立包装数量 | 1000
包装形态 | Taping
RoHS | Yes

特性:

Grade

Standard

Package Code

TO-263 (D2PAK)

JEITA Package

SC-83

Package Size[mm]

10.1x13.1 (t=4.5)

Applications

Motor, Inverter

Number of terminal

3

Polarity

Nch

Drain-Source Voltage VDSS[V]

600

Drain Current ID[A]

20.0

RDS(on)[Ω] VGS=15V(Typ.)

0.18

RDS(on)[Ω] VGS=Drive (Typ.)

0.18

Total gate charge Qg[nC]

45.0

Power Dissipation (PD)[W]

252.0

Drive Voltage[V]

15.0

Trr (Typ.)[ns]

85

Mounting Style

Surface mount

Bare Die Part Number

Available: K7802

Storage Temperature (Min.)[°C]

-55

Storage Temperature (Max.)[°C]

150

特点:

  • Fast reverse recovery time (trr)
  • Low on-resistance
  • Fast switching speed
  • Drive circuits can be simple
  • Pb-free plating ; RoHS compliant

设计资源

 

文档

Application Note

  • Double-pulse test substantiated advantages of PrestoMOS™

技术记事

Schematic Design & Verification

  • Temperature derating method for Safe Operating Area (SOA)
  • 开关电路的功率损失计算
  • 开关波形的监测方法
  • 功率测量中探针校正的重要性 倾斜校正篇
  • 旁路电容器的阻抗特性

Thermal Design

  • Notes for Temperature Measurement Using Thermocouples
  • 热仿真用双热阻模型
  • What is a Thermal Model? (Transistor)
  • Notes for Temperature Measurement Using Forward Voltage of PN Junction
  • 热阻RthJC 的测量方法和使用方法
  • 使用热电偶测量封装背面温度时的注意点

设计模型

Models

  • R6020JNJ SPICE Model

Characteristics Data

  • R6020JNJ ESD Data

封装和质量数据

Package Information

  • Package Dimensions
  • Taping Information
  • Explanation for Marking
  • Condition of Soldering
  • Moisture Sensitivity Level
  • Anti-Whisker formation

Environmental Data

  • About Flammability of Materials
  • About Non-use SVHC under Reach Regulation : Please contact us by filling in the form.
  • Compliance of the RoHS / ELV directive

Export Information

  • About Export Regulations