R6002ENH
低噪声规格 Nch 600V 2A 功率MOSFET
R6002ENH
R6002ENH
低噪声规格 Nch 600V 2A 功率MOSFET
R6xxxENx系列是重视易用性,以低噪声性能为特点的Super Junction MOSFET产品。该系列产品可在音响和照明等需要尽可能抑制噪声的应用中实现高性能。
主要规格
特性:
Package Code
SOP8
Applications
Power Supply
Number of terminal
8
Polarity
Nch
Drain-Source Voltage VDSS[V]
600
Drain Current ID[A]
1.7
RDS(on)[Ω] VGS=10V(Typ.)
2.8
RDS(on)[Ω] VGS=Drive (Typ.)
2.8
Total gate charge Qg[nC]
6.5
Power Dissipation (PD)[W]
2
Drive Voltage[V]
10
Trr (Typ.)[ns]
240
Mounting Style
Surface mount
Bare Die Part Number
Available: K7412
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
150
Package Size [mm]
5x6 (t=1.75)
特点:
- Low on-resistance
- Fast switching speed
- Parallel use is easy
- Pb-free plating ; RoHS compliant