R6030ENZ
低噪声规格 Nch 600V 30A 功率MOSFET

R6xxxENx系列是重视易用性,以低噪声性能为特点的Super Junction MOSFET产品。该系列产品可在音响和照明等需要尽可能抑制噪声的应用中实现高性能。

Data Sheet 购买 *
* 本产品是标准级的产品。
本产品不建议使用于车载设备。

主要规格

 
型号 | R6030ENZC17
Status | 推荐品
封装 | TO-3PF
包装数量 | 300
最小独立包装数量 | 30
包装形态 | Tube
RoHS | Yes

特性:

Grade

Standard

Package Code

TO-3PF

Package Size[mm]

26.5x15.5 (t=5.5)

Applications

Power Supply

Number of terminal

3

Polarity

Nch

Drain-Source Voltage VDSS[V]

600

Drain Current ID[A]

30.0

RDS(on)[Ω] VGS=10V(Typ.)

0.115

RDS(on)[Ω] VGS=Drive (Typ.)

0.115

Total gate charge Qg[nC]

85.0

Power Dissipation (PD)[W]

120.0

Drive Voltage[V]

10.0

Trr (Typ.)[ns]

660

Mounting Style

Leaded type

Bare Die Part Number

Available: K7407

Storage Temperature (Min.)[°C]

-55

Storage Temperature (Max.)[°C]

150

特点:

  • Low on-resistance
  • Fast switching speed
  • Gate-source voltage (VGSS) guaranteed to be ±20V
  • Drive circuits can be simple
  • Parallel use is easy
  • Pb-free lead plating ; RoHS compliant

设计资源

 

技术记事

Schematic Design & Verification

  • Temperature derating method for Safe Operating Area (SOA)
  • 开关电路的功率损失计算
  • 开关波形的监测方法
  • 功率测量中探针校正的重要性 倾斜校正篇
  • 旁路电容器的阻抗特性

Thermal Design

  • Notes for Temperature Measurement Using Thermocouples
  • 热仿真用双热阻模型
  • What is a Thermal Model? (Transistor)
  • Notes for Temperature Measurement Using Forward Voltage of PN Junction
  • 热阻RthJC 的测量方法和使用方法
  • 使用热电偶测量封装背面温度时的注意点

设计模型

Simulations (Login Required)

  • Method for Exporting Circuit Data (ROHM Solution Simulator)

Models

  • R6030ENZ SPICE Model
  • R6030ENZ Thermal Model (lib)

Characteristics Data

  • ESD Data

封装和质量数据

Package Information

  • Package Dimensions
  • Inner Structure
  • Moisture Sensitivity Level
  • Anti-Whisker formation

Environmental Data

  • Constitution Materials List
  • About Flammability of Materials
  • About Non-use SVHC under Reach Regulation : Please contact us by filling in the form.
  • Compliance of the RoHS / ELV directive

Export Information

  • About Export Regulations