R6511ENX
Nch 650V 11A 功率MOSFET

R6511ENX是具有低导通电阻和高开关速度的功率MOSFET。适合开关应用。

Data Sheet 购买
* 本产品是标准级的产品。
本产品不建议使用于车载设备。
Data Sheet 购买

主要规格

 
型号 | R6511ENX
Status | 可购买
封装 | TO-220FM
包装数量 | 500
最小独立包装数量 | 100
包装形态 | Bulk
RoHS | Yes

特性:

Grade

Standard

Package Code

TO-220FM

Package Size[mm]

15.1x10.1 (t=4.6)

Applications

Power Supply

Number of terminal

3

Polarity

Nch

Drain-Source Voltage VDSS[V]

650

Drain Current ID[A]

11.0

RDS(on)[Ω] VGS=10V(Typ.)

0.36

RDS(on)[Ω] VGS=Drive (Typ.)

0.36

Total gate charge Qg[nC]

32.0

Power Dissipation (PD)[W]

53.0

Drive Voltage[V]

10.0

Trr (Typ.)[ns]

430

Mounting Style

Leaded type

Bare Die Part Number

Available: K7453

Storage Temperature (Min.)[°C]

-55

Storage Temperature (Max.)[°C]

150

特点:

  • Low on-resistance
  • Fast switching speed
  • Parallel use is easy
  • Pb-free plating ; RoHS compliant

设计资源

 

技术记事

Schematic Design & Verification

  • Temperature derating method for Safe Operating Area (SOA)
  • 开关电路的功率损失计算
  • 开关波形的监测方法
  • 功率测量中探针校正的重要性 倾斜校正篇
  • 旁路电容器的阻抗特性

Thermal Design

  • Notes for Temperature Measurement Using Thermocouples
  • 热仿真用双热阻模型
  • What is a Thermal Model? (Transistor)
  • Notes for Temperature Measurement Using Forward Voltage of PN Junction
  • 热阻RthJC 的测量方法和使用方法
  • 使用热电偶测量封装背面温度时的注意点

设计模型

Models

  • R6511ENX SPICE Model

Characteristics Data

  • R6511ENX ESD Data

封装和质量数据

Package Information

  • Package Dimensions
  • Explanation for Marking
  • Moisture Sensitivity Level
  • Anti-Whisker formation

Environmental Data

  • About Flammability of Materials
  • About Non-use SVHC under Reach Regulation : Please contact us by filling in the form.
  • Compliance of the RoHS / ELV directive

Export Information

  • About Export Regulations