R8002KND3
(新产品)

R8002KND3 (新产品)
高速开关规格 Nch 800V 1.6A 功率MOSFET

R8xxxKNx系列是重视高效性,以高速开关性能为特点的Super Junction MOSFET产品。该系列产品可在追求高速开关的应用中实现优良性能。高速开关性能有助于实现PFC和LLC等电路的高效率化。

Data Sheet 购买
* 本产品是标准级的产品。
本产品不建议使用于车载设备。
Data Sheet 购买

主要规格

 
型号 | R8002KND3TL1
Status | 推荐品
封装 | TO-252
包装数量 | 2500
最小独立包装数量 | 2500
包装形态 | Taping
RoHS | Yes

特性:

Grade

Standard

Package Code

TO-252 (DPAK)

JEITA Package

SC-63

Package Size[mm]

6.6x10.0 (t=2.3)

Applications

Power Supply

Number of terminal

3

Polarity

Nch

Drain-Source Voltage VDSS[V]

800

Drain Current ID[A]

1.6

RDS(on)[Ω] VGS=10V(Typ.)

3.5

RDS(on)[Ω] VGS=Drive (Typ.)

3.5

Total gate charge Qg[nC]

7.5

Power Dissipation (PD)[W]

30.0

Drive Voltage[V]

10.0

Trr (Typ.)[ns]

180

Mounting Style

Surface mount

Bare Die Part Number

Available: K8107

Storage Temperature (Min.)[°C]

-55

Storage Temperature (Max.)[°C]

150

特点:

  • Low on-resistance
  • Fast switching
  • Parallel use is easy
  • Pb-free plating ; RoHS compliant

设计资源

 

技术记事

Schematic Design & Verification

  • Temperature derating method for Safe Operating Area (SOA)
  • 开关电路的功率损失计算
  • 开关波形的监测方法
  • 功率测量中探针校正的重要性 倾斜校正篇
  • 旁路电容器的阻抗特性

Thermal Design

  • Notes for Temperature Measurement Using Thermocouples
  • 热仿真用双热阻模型
  • What is a Thermal Model? (Transistor)
  • Notes for Temperature Measurement Using Forward Voltage of PN Junction
  • 热阻RthJC 的测量方法和使用方法
  • 使用热电偶测量封装背面温度时的注意点

设计模型

Characteristics Data

  • R8002KND3 ESD Data

封装和质量数据

Package Information

  • Package Dimensions
  • Explanation for Marking
  • Condition of Soldering
  • Moisture Sensitivity Level
  • Anti-Whisker formation

Environmental Data

  • About Flammability of Materials
  • About Non-use SVHC under Reach Regulation : Please contact us by filling in the form.
  • Compliance of the RoHS / ELV directive

Export Information

  • About Export Regulations