QS8J2
1.5V驱动 双P沟道MOSFET
主要规格
特性：
Package Code
TSMT8
Applications
Power Supply
Number of terminal
8
Polarity
P+P
Drain-Source Voltage VDSS[V]
-12
Drain Current ID[A]
-4
RDS(on)[Ω] VGS=1.5V(Typ)
0.066
RDS(on)[Ω] VGS=2.5V(Typ)
0.036
RDS(on)[Ω] VGS=4.5V(Typ)
0.026
RDS(on)[Ω] VGS=Drive (Typ)
0.066
Total gate charge Qg[nC]
20
Power Dissipation (PD)[W]
1.5
Drive Voltage[V]
-1.5
Mounting Style
Surface mount
Storage Temperature (Min)[℃]
-55
Storage Temperature (Max)[℃]
150
Package Size [mm]
2.8x3.0 (t=0.85)
特点：
· 低电压(1.5V)驱动型· 双P沟道小信号MOSFET
· 小型贴片封装
· 无铅/符合RoHS标准
