4V Drive Pch+Pch MOSFET_QS8J5
电界效果晶体管MOSFET。复合两颗Pch MOSFET。提供通过采用细微流程的「超低阻值的设备」而在广泛领域得以应用的功率MOSFET，并且结合用途，以多样的小型高功率复合型的产品线对应多种市场需求。
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特性：
Grade
Standard
Package Code
TSMT8
Package Size[mm]
3.0x2.8 (t=0.8)
Applications
Power Supply
Number of terminal
8
Polarity
Pch+Pch
Drain-Source Voltage VDSS[V]
-30
Drain Current ID[A]
-5.0
RDS(on)[Ω] VGS=4V(Typ.)
0.045
RDS(on)[Ω] VGS=4.5V(Typ.)
0.04
RDS(on)[Ω] VGS=10V(Typ.)
0.028
RDS(on)[Ω] VGS=Drive (Typ.)
0.045
Total gate charge Qg[nC]
10.0
Power Dissipation (PD)[W]
1.5
Drive Voltage[V]
-4.0
Mounting Style
Surface mount
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
150