YQ30NL10SE (新产品)
Trench MOS Structure, 100V, 30A, TO-263L, Highly Efficient SBD

The YQ30NL10SE is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high temperatures. Ideal for switching power supplies, freewheel diodes, and reverse polarity protection applications.

Data Sheet 购买 *
* 本产品是标准级的产品。
本产品不建议使用于车载设备。

主要规格

 
型号 | YQ30NL10SETL
Status | 可购买
封装 | LPDL
包装数量 | 1000
最小独立包装数量 | 1000
包装形态 | Taping
RoHS | Yes

特性:

Configuration

Single

Package Code

TO-263L

Number of terminal

3

VRM[V]

100

Reverse Voltage VR[V]

100

Average Rectified Forward Current IO[A]

30

IFSM[A]

200

Forward Voltage VF(Max.)[V]

0.86

IF @ Forward Voltage [A]

30

Reverse Current IR(Max.)[mA]

0.15

VR @ Reverse Current[V]

100

Storage Temperature (Min.)[°C]

-55

Storage Temperature (Max.)[°C]

150

Package Size [mm]

10.1x15.1 (t=4.7)

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特点:

  • High reliability
  • Power mold type
  • Low VF and low IR
  • Low capacitance

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YQ30NL10SEFH   Grade| Automotive Status可购买
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