SG6612WN
短路耐受时间 5µs, 650V 50A, IGBT裸芯片
SG6612WN
SG6612WN
短路耐受时间 5µs, 650V 50A, IGBT裸芯片
应用：通用逆变器、UPS、功率调节器、Welding
关于裸芯片的规格和销售事宜，请咨询ROHM销售部门，目前尚未开始网售。
主要规格
特性：
Series
T: For inverter (tsc 5µs)
VCES [V]
650
IC(Nominal) [A] / IF(Nominal) [A]
50
VCE(sat) (Typ.) [V]
1.65
tsc(Min.) [us]
5
Operating Temperature (Min.)[°C]
-40
Operating Temperature (Max.)[°C]
175
特点：
- Trench Light Punch Through Type
- Low Collector - Emitter Saturation Voltage
- Low Switching Loss
- Short Circuit Withstand Time 5µs
