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BR93H76RF-2LB(H2)
Microwire BUS 8kbit(512x16bit) EEPROM
BR93H76RF-2LB(H2)
BR93H76RF-2LB(H2)
Microwire BUS 8kbit(512x16bit) EEPROM
本产品是面向工业设备市场的产品，保证可长期稳定供货。 是适合这些用途的产品。
BR93H76RF-2LB是串行3线式接口方式的串行EEPROM。
主要规格
特性：
Series
BR93H-2LB
Density [bit]
8K
Bit Format [Word x Bit]
512 x 16
Vcc(Min.)[V]
2.5
Vcc(Max.)[V]
5.5
Circuit Current (Max.)[mA]
3
Standby Current (Max.)[μA]
10
Write Cycle (Max.)[ms]
4
Input Frequency (Max.)[Hz]
2M
Endurance (Max.)[Cycle]
106
Data Retention (Max.)[Year]
100
I/F
MicroWire BUS(3-Wire)
Operating Temperature (Min.)[°C]
-40
Operating Temperature (Max.)[°C]
125
Package Size [mm]
5x6.2 (t=1.71)
特点：
· Long time support a product for Industrial applications.· Conforming to Microwire BUS
· Withstands electrostatic voltage 6kV (HBM method typ.)
· Wide temperature range -40℃ to +125℃ (-40℃ to +85℃, -40℃ to +105℃ in other series)
· Same package line up and same pin configuration
· 2.5V to 5.5V single supply voltage operation
· Address auto increment function at read operation
· Write mistake prevention function Write prohibition at power on Write prohibition by command code Write mistake prevention circuit at low voltage
· Program cycle auto erase and auto end function
· Program condition display by READY / BUSY
· Low current consumption At write operation (at 5V) : 0.8mA (Typ.) At read operation (at 5V) : 0.5mA (Typ.) At standby operation (at 5V) : 0.1µA (Typ.) (CMOS input)
· High reliability by ROHM original Double-Cell structure
· Data retention for 20 years(Ta=125℃)
· Endurance up to 300,000 cycles(Ta=125℃)
· Data at shipment all address FFFFh
